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Cystech Electonics Corp...
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| Part No. |
MTC5806AQ8 MTC5806AQ8-J
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| OCR Text |
...operation p d 0.9 (note 3) w operating junction and storage temperature range tj; tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 40 ... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
319.82K /
12 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTC5806V8 MTC5806V8-0-T6-G
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| OCR Text |
...e package shipping mtc5806v8-0-t6-g dfn3 3 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel mt...37m 70m r dson @v gs =4.5v(-4.5v) typ. 42m 93m pin 1 environment friendly grade : s for ro... |
| Description |
N- AND P-Channel Logic Level Enhancement Mode MOSFET
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| File Size |
442.08K /
13 Page |
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it Online |
Download Datasheet |
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Wuxi NCE Power Semicond...
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| Part No. |
NCE9926
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| OCR Text |
...gs(th) v ds =v gs ,i d =250 a 0.5 0.7 1.2 v v gs =4.5v, i d =6a - 20 28 drain-source on-state resistance r ds(on) v gs =2.5v, i d =5a - 26 37 m? forward transconductance g fs v ds =5v,i d =6a 20 - - s dynamic charac... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
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| File Size |
339.85K /
7 Page |
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it Online |
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Alpha & Omega Semicondu...
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| Part No. |
AOL1482
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| OCR Text |
...e noted 100v avalanche energy l=0.1mh c mj avalanche current c 3.6 continuous drain current 61 4.5 a 35 a t a =25c i dsm a t a =70c i d 28 20 t c =25c t c =100c power dissipation b p d w power dissipation a p dsm w t a =70c 75 1.2 t a =... |
| Description |
100V N-Channel MOSFET
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| File Size |
229.23K /
6 Page |
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it Online |
Download Datasheet |
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