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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
VB326SP VB326 VB326SP13TR
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OCR Text |
...e Maximum Enable Current Value -0.3 to Vclamp 10 10.5 -0.3 to 7 200 1 -0.3 to VCC + 0.3 100 DC to 150 -0.3 to VCC + 0.3 100 125 275 4 + 1....6mH; IC= 8A (See figure 2) Rc=0.5; Lc=3.75mH; Tj=25C; Vbat=13V (See figure 6) Rc=0.5; Lc=3.75mH; IC=... |
Description |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. From old datasheet system
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File Size |
191.93K /
9 Page |
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CET[Chino-Excel Technology]
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Part No. |
CEF07N8
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OCR Text |
...TJ, TSTG Limit 800 30 4 12 4 50 0.4 -55 to 150 Unit V V A A A W W/ C C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Ther...6mH RG=25
Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
6
EAS IAS
500 7
mJ A
OFF... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
42.34K /
5 Page |
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Fairchild Semiconductor, Corp.
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Part No. |
IRFZ24A
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OCR Text |
...x.) @ VDS = 60V Lower RDS(ON): 0.050 (Typ.)
IRFZ24A
BVDSS = 60 V RDS(on) = 0.07 ID = 17 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source...6mH, IAS=17A, VDD=25V, RG=27, Starting TJ =25C (3) ISD 17A, di/dt 250A/s, VDD BV DSS , Starting T... |
Description |
ADVANCED POWER MOSFET 60V N-Channel Power MOSFET(漏源电压0V的N沟道增强型功率MOS场效应管) 17 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
217.34K /
7 Page |
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Price and Availability
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