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  10-100s Datasheet PDF File

For 10-100s Found Datasheets File :: 9827    Search Time::0.969ms    
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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ... Short circuit withstand time - 10 s * Designed for operation above 30 kHz * NPT-Technology for 600V applications offers: - parallel switchi...100s 1ms 10ms 100ms TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as ...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SI9424 SI9424DY

FAIRCHILD[Fairchild Semiconductor]
Part No. SI9424 SI9424DY
OCR Text ... (Note 1a) Units V V A W 10 -8.0 -50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)...100s 40 SINGLE PULSE RJA=125 C/W TA=25 C 30 o o 1s 10s 1 DC 20 0.1 VGS= -4.5V SINGL...
Description Single P-Channel 2.5V Specified PowerTrench MOSFET

File Size 72.55K  /  5 Page

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    SI9435 SI9435DY SI9435DYL86Z SI9435DYL99Z

Fairchild Semiconductor, Corp.
Part No. SI9435 SI9435DY SI9435DYL86Z SI9435DYL99Z
OCR Text ... -30 V. RDS(ON) = 50 m @ VGS = -10 V RDS(ON) = 80 m @ VGS = -4.5 V * Low gate charge * Fast switching speed * High performance trench techno...100s 1ms 10ms 100ms 1s 1 VGS = -10V SINGLE PULSE RJA = 125 C/W TA = 25 C 0.01 0.1 1 10 100 0 o o ...
Description GP RELAY P沟道MOSFET的逻辑电平的PowerTrench
5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SO-8
P-Channel Logic Level PowerTrench MOSFET

File Size 95.95K  /  5 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text ... Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight...100s 1ms 10ms 100ms 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy loss...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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    A276308 A276308A A276308A-55 A276308A-70 A276308A-90 A276308AL-55 A276308AL-70 A276308AL-90

AMIC Technology Corporation
AMICC[AMIC Technology]
Part No. A276308 A276308A A276308A-55 A276308A-70 A276308A-90 A276308AL-55 A276308AL-70 A276308AL-90
OCR Text ...1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 OE / VPP A10 CE I/O7 I/...100s pulse followed by a byte verification to determine whether the byte has been successfully progr...
Description KPT02E12-10PWA206
64K X 8 OTP CMOS EPROM

File Size 168.25K  /  14 Page

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    BAS125-07 BAS125-07W BAS1257W Q62702-D1347

SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAS125-07 BAS125-07W BAS1257W Q62702-D1347
OCR Text ...0 900 mV I F = 1 mA I F = 10 mA I F = 35 mA AC characteristics Diode capacitance CT rf - 16 1.1 - pF VR = 0 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 kHz Semiconductor Group Semiconduct...
Description Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE
Silicon Schottky Diode (For low-loss fast-recovery meter protection bias isolation and clamping applications)
From old datasheet system

File Size 31.81K  /  4 Page

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    FZT788 FZT788B FZT788BTA FZT788B-15

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. FZT788 FZT788B FZT788BTA FZT788B-15
OCR Text ...0.2 0 IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55C +25C +100C +175C IC/IB=200 - (Volts) V V...100s 0.1 V 0.01 0.1 1 10 100 I+ - Collector Current (Amps) VCE - Collector E...
Description    PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
   SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

File Size 80.19K  /  2 Page

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    MCH3301

Sanyo Semicon Device
Part No. MCH3301
OCR Text ... SANYO : MCPH3 Ratings --20 10 --1 --4 1 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain...100s --8 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 --1.0 7 5 3 2...
Description P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications

File Size 30.52K  /  4 Page

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    MCH3302

SANYO[Sanyo Semicon Device]
Part No. MCH3302
OCR Text ...950 Conditions Ratings min -30 -10 10 -2.5 typ max Unit V A A V mS m m pF pF pF Marking : JB Continued on next page. Any and all SA...100s 1m s Gate-to-Source Voltage, VGS - V --8 Drain Current, ID - A --7 --6 --5 --4 --3...
Description P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications

File Size 39.70K  /  4 Page

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    MCH3306

SANYO[Sanyo Semicon Device]
Part No. MCH3306
OCR Text ...rain SANYO : MCPH3 Ratings -20 10 --2 --8 1 150 --55 to +150 Unit V V A A W C C Mounted on a ceramic board (900mm2!0.8mm) Electrical ...100s m --1.0 7 5 3 2 --0.1 7 5 3 2 D s 10 0m s at io n er op C Operation in th...
Description 2 A, 20 V, 0.145 ohm, P-CHANNEL, Si, POWER, MOSFET
Ultrahigh-Speed Switching Applications

File Size 28.47K  /  4 Page

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