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STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P0R9070E0ZACE
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| OCR Text |
... Burst) Flash Memory - 1 die of 128mbit (8Mb x16) PSRAM Supply voltage - VDDF = VCCP = VDDQ = 1.7 to 1.95V - VPPF = 9V for fast program (12V tolerant) Electronic signature - Manufacturer Code: 20h - Device Code: 8819 Package - ECOPACK(R) Sy... |
| Description |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
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| File Size |
139.92K /
26 Page |
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Download Datasheet
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P0R9070E0ZADE
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| OCR Text |
...SS Common Flash Interface (CFI) 128mbit synchronous dynamic RAM - Organized as 4 Banks of 2 MWords, each 16 bits wide Synchronous burst read and write - Fixed Burst Lengths: 1, 2, 4, 8 words or Full Page - Burst Types: Sequential and Interl... |
| Description |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
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| File Size |
187.64K /
26 Page |
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it Online |
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Samsung Electronics Inc
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| Part No. |
K4S281632F-TC75
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| OCR Text |
128mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
K4S281632A
2M x 16Bit x 4 Banks S... |
| Description |
DRAM (Dynamic RAM) - Datasheet Reference
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| File Size |
107.60K /
10 Page |
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it Online |
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VML[Vanguard International Semiconductor]
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| Part No. |
P2V28S30ATP-8 P2V28S20ATP-7 P2V28S20ATP-75 P2V28S20ATP-8 P2V28S20DTP-7 P2V28S30ATP-7 P2V28S30ATP-75
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| OCR Text |
...sity Interface PSC DRAM
128 :128mbit V :LVTTL
JULY.2000
Page-3
Rev.2.2
128Mb Synchronous DRAM
P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75,-8... |
| Description |
128Mb SDRAM Specification
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| File Size |
648.67K /
51 Page |
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Numonyx B.V
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| Part No. |
M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36W0R6050T3 M36W0R6050T3ZAQE M36W0R6050T3ZAQF M36W0R6040B3 M36W0R6040B3ZAQE M36W0R6040T3ZAQE M36W0R6040T3ZAQF M36P0R9070E0 M36P0R9070E0ZAC M36P0R9070E0ZACE M36P0R9070E0ZACF M36W0R6040B3ZAQF M36W0R6040T3
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| OCR Text |
... Burst) Flash Memory - 1 die of 128mbit (8Mb x16) PSRAM Supply voltage - VDDF = VCCP = VDDQ = 1.7 to 1.95V - VPPF = 9V for fast program Electronic signature - Manufacturer Code: 20h - Device Code: 8819 ECOPACK(R) package available
FBGA
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| Description |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
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| File Size |
430.64K /
23 Page |
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it Online |
Download Datasheet |
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Price and Availability
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