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  140.0mhz Datasheet PDF File

For 140.0mhz Found Datasheets File :: 8310    Search Time::1.625ms    
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    IDT71256 IDT71256L IDT71256L100D IDT71256L100DB IDT71256L100L IDT71256L100LB IDT71256L100P IDT71256L100PB IDT71256L100TD

INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
Part No. IDT71256 IDT71256L IDT71256L100D IDT71256L100DB IDT71256L100L IDT71256L100LB IDT71256L100P IDT71256L100PB IDT71256L100TD IDT71256L100TDB IDT71256L100Y IDT71256L100YB IDT71256L120D IDT71256L120DB IDT71256L120L IDT71256L120LB IDT71256L120P IDT71256L120PB IDT71256L120TD IDT71256L120TDB IDT71256L120Y IDT71256L120YB IDT71256L150D IDT71256L150DB IDT71256L150L IDT71256L150LB IDT71256L150P IDT71256L150PB IDT71256L150TD IDT71256L150TDB IDT71256L150Y IDT71256L150YB IDT71256L20D IDT71256L20DB IDT71256L20L IDT71256L20LB IDT71256L20P IDT71256L20PB IDT71256L20TD IDT71256L20TDB IDT71256L20Y IDT71256L20YB IDT71256L25D IDT71256L25DB IDT71256L25L IDT71256L25LB IDT71256L25P IDT71256L25PB IDT71256L25TD IDT71256L25TDB IDT71256L25Y IDT71256L25YB IDT71256L30D IDT71256L30DB IDT71256L30L IDT71256L30LB IDT71256L30P IDT71256L30PB IDT71256L30TD IDT71256L30TDB IDT71256L30Y IDT71256L30YB IDT71256L35D IDT71256L35DB IDT71256L35L IDT71256L35LB IDT71256L35P IDT71256L35PB IDT71256L35TD IDT71256L35TDB IDT71256L35Y IDT71256L35YB IDT71256L45D IDT71256L45DB IDT71256L45L IDT71256L45LB IDT71256L45P IDT71256L45PB IDT71256L45TD IDT71256L45TDB IDT71256L45Y IDT71256L45YB IDT71256L55D IDT71256L55DB IDT71256L55L IDT71256L55LB I
OCR Text ... Com'l. -- 105 -- 3 -- 0.4 Mil. 140 120 20 3 20 1.5 mA mA Unit mA ISB ISB1 71256S/L45 Symbol ICC Parameter Dynamic Operating Current CS VIL, Outputs Open VCC = Max., f = fMAX(2) Standby Power Supply Current (TTL Level) CS VIH, VC...
Description Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位)
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位)
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )

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    IRF7201 IRF7201PBF IRF7201TR

International Rectifier
Part No. IRF7201 IRF7201PBF IRF7201TR
OCR Text ...0 60 80 VGS = 10V 100 120 140 160 A 0.00 0 10 20 30 40 A TJ , Junction Temperature (C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. On-Resistance Vs. Drain Current R DS(on) , D...
Description Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 111.54K  /  7 Page

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    IRF7301 IRF7301TR

IRF[International Rectifier]
Part No. IRF7301 IRF7301TR
OCR Text ...-- 9.0 42 32 51 4.0 6.0 660 280 140 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.050 VGS = 4.5V, ...0MHz, See Fig. 5 G S pF Source-Drain Ratings and Characteristics IS ISM VSD t rr Qr...
Description FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.86K  /  9 Page

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    IRF7303 IRF7303TR

International Rectifier
http://
Part No. IRF7303 IRF7303TR
OCR Text ...0 80 V G S = 10 V 100 120 140 160 A V G S , Ga te-to-S o urce V oltage (V ) T J , Junction Temperature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF7303 1000 800...
Description Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

File Size 107.34K  /  9 Page

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    IRF7304

International Rectifier
Part No. IRF7304
OCR Text ... VGS = -4.5V, ID = -2.2A --- 0.140 VGS = -2.7V, ID = -1.8A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -16V, ID = -2.2A --- -1.0 VDS = ...0MHz, See Fig. 5 pF Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Pa...
Description Generation V Technology

File Size 205.83K  /  6 Page

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    IRF7306 IRF7306TR IRF7306TRPBF

International Rectifier
Part No. IRF7306 IRF7306TR IRF7306TRPBF
OCR Text ...60 80 VG S = -10V 100 120 140 160 A -V G S , G ate-to-S o urce V oltage ( V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF7306 1000 8...
Description Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.78K  /  9 Page

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    IRF7307 IRF7307TR

IRF[International Rectifier]
Part No. IRF7307 IRF7307TR
OCR Text ...-- -- 0.070 -- -- 0.090 -- -- 0.140 0.70 -- -- -0.70 -- -- 8.30 -- -- 4.00 -- -- -- -- 1.0 -- -- -1.0 -- -- 25 -- -- -25 -- -- 100 -- -- 20 ...0MHz pF P-Channel VGS = 0V, V DS = -15V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficien...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 190.19K  /  10 Page

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    IRF7309 IRF7309TR IRF7309PBF

International Rectifier
Part No. IRF7309 IRF7309TR IRF7309PBF
OCR Text ...40 -20 0 20 40 60 80 100 120 140 160 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 149 IRF7309 N-Channel 10...
Description 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 161.00K  /  8 Page

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    IRF730APBF

IRF[International Rectifier]
Part No. IRF730APBF
OCR Text ...GS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF730APbF 100000 VGS = 0V, f = 1 MHZ Ciss = C +...
Description SMPS MOSFET

File Size 180.64K  /  8 Page

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    IRF730A IRF730 IRF730APBF

IRF[International Rectifier]
Part No. IRF730A IRF730 IRF730APBF
OCR Text ...GS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF730A 100...
Description 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
SMPS MOSFET

File Size 100.63K  /  8 Page

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For 140.0mhz Found Datasheets File :: 8310    Search Time::1.625ms    
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