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    SUB75N03-04 SUP75N03-04

Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. SUB75N03-04 SUP75N03-04
OCR Text ...ain Current (A) Capacitance 14000 12000 C - Capacitance (pF) 10000 8000 6000 4000 Coss 2000 0 0 6 12 18 24 30 Crss Ciss 20 Gate Charg...sec) www.vishay.com Document Number: 70745 S-04137--Rev. E, 18-Jun-01 2-4 ...
Description N-Channel 30-V (D-S), 175C MOSFET
N-Channel 30-V (D-S) 175C MOSFET
N-Channel MOSFET
N-Channel 30-V (D-S), 175C MOSFET
N-Channel 30-V (D-S) 175C MOSFET

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    MC100EP195FAG MC100EP195MNR4G MC10EP195MNR4G MC10EP19506 MC10EP195MNG MC100EP195 MC100EP195FA MC100EP195FAR2 MC100EP195F

ONSEMI[ON Semiconductor]
Part No. MC100EP195FAG MC100EP195MNR4G MC10EP195MNR4G MC10EP19506 MC10EP195MNG MC100EP195 MC100EP195FA MC100EP195FAR2 MC100EP195FAR2G MC100EP195MNG MC10EP195 MC10EP195FA MC10EP195FAG MC10EP195FAR2 MC10EP195FAR2G
OCR Text ...om 6 MC10EP195, MC100EP195 14000.0 13000.0 12000.0 11000.0 10000.0 9000.0 DELAY ( ps) 8000.0 7000.0 6000.0 5000.0 4000.0 3000.0 2000.0 ...sec @ 248C <2 to 3 sec @ 260C LQFP-23 LQFP-23 LQFP-23 QFN-32 QFN-32 QFN-32 Condition 1 VEE = 0 V VCC...
Description 3.3V ECL PROGRAMMABLE DELAY CHIP

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    NSV50350ADT4G

ON Semiconductor
Part No. NSV50350ADT4G
OCR Text ... k1, 2 oz 8000 2000 12000 16000 14000 350 400 360 370 375 415 380 400 420 360 vak, anode?cathode voltage (v) 9 6 5 4 3 50 150 200 250 i reg(ss) , steady state current (ma) 710 dc test steady state, still air 8 100 t a = 25 c 2 1 0 300 450...
Description Constant Current Regulator & LED Driver

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    SUM110P04-04L SUM110P04-04L-E3

Vishay Intertechnology, Inc.
Vishay Siliconix
Part No. SUM110P04-04L SUM110P04-04L-E3
OCR Text ...2000 4000 6000 8000 10000 12000 14000 0 5 10 15 20 25 30 35 40 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss ...sec) 1000 10 0.0001 0.01 1 10 100 (a) i dav 0.1 0.001 i av (a) at t a = 25 c i av (a) at t a ...
Description 110 A, 40 V, 0.0042 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB TO-263, 3 PIN
110 A, 40 V, 0.0042 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB ROHS COMPLIANT, TO-263, 3 PIN
P-Channel 40-V (D-S) 175 °C MOSFET

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    SXXHR680 SXXHN680

Hind Rectifiers Limited.
Part No. SXXHR680 SXXHN680
OCR Text ...age On-state current = 2100A 14000 160 980 160 160 160 1.55 0.80 0.33 VFM V0 r0 THERMAL & MECHANICAL PARAMETERS Thermal impedance, ...sec 1 1 040 HIND RECTIFIERS LTD 3 of 5 Rectifier Diode SXXHN/HR680 Transient Thermal ...
Description Rectifier Diode

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    T-10913 T-14056 T-50820 T-50821 T-50826 T-10918 T-10927 T-50827 T-50520 T-10926 T-14000 T-14001 T-14002 T-14003 T-14004

Rhombus Industries Inc.
Part No. T-10913 T-14056 T-50820 T-50821 T-50826 T-10918 T-10927 T-50827 T-50520 T-10926 T-14000 T-14001 T-14002 T-14003 T-14004 T-14005 T-50822 T-50823 T-50824 T-50825 T-10906 T-10914 T-10902 T-10916 T-10907 T-10917 T-10903 T-10905 T-10908 T-10919 T-50811
OCR Text ...100 mil SMD P/N DIP P/N Style T-14000 T-14001 T-14002 T-14003 T-14004 T-14005 T-14055 T-14056 T-14057 T-14058 T-14059 T-14060 T-14061 T-1406...sec. LL min. Time max. CW/W max. max. ( V-S ) ( ns ) ( pF ) ( H ) 2.1 2.3 2.7 3.0 3.5 3.5 2.1 2.3 2....
Description Ethernet Application Transformers

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    3384-15UTC-S400 3384-15UTC_S400-X9 3384-15UTC/S400-X9

Everlight Electronics Co., Ltd
Part No. 3384-15UTC-S400 3384-15UTC_S400-X9 3384-15UTC/S400-X9
OCR Text ...000 8000 Z1 8000 11000 Z2 11000 14000 Measurement Uncertainty of Luminous Intensity: 15% Forward Voltage Combination (V at 20mA) VF R...sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.C Tel: 886-2-2267-2000, 2267-9936 Fax: 886...
Description 5.0 mm Round LED (T-1 3/4 )

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    IRG4PSC71UD

International Rectifier
Part No. IRG4PSC71UD
OCR Text ...2000 4000 6000 8000 10000 12000 14000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c...sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ da...
Description 600V UltraFast 8-60 kHz Copack IGBT in a TO-274AA package

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    IRF[International Rectifier]
Part No. FA38SA50LC
OCR Text ...f.com 3 FA38SA50LC 16000 14000 12000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description 500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package

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    http://
Part No. QRD2412001
OCR Text ...00 .06000 .08000 .10000 .12000 .14000 .16000 .18000 .20000 .00010 .00100 .01000 .10000 1.00000 10.00000 100.00000 time - t - seconds thermal impedance - rjc - c/w (junction to case) qrd01 maximum on-state forward voltage drop 0.00 1.00 2.00...
Description POW-R-BLOK Dual DIODE Module (120 Amperes / Up to 2400 Volts)

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