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Sony, Corp.
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| Part No. |
CXK77B1841AGB CXK77B3641AGB
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| OCR Text |
... an sa address input in 8mb and 16mb lw srams. 3. pad location 2b is a true no-connect. however, it is defined as an sa address input in 16mb lw srams. 4. pad location 4d is a true no-connect. however, it is defined as a zq output impedance... |
| Description |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
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| File Size |
227.24K /
28 Page |
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it Online |
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Sony
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| Part No. |
CXK77B1840AGB CXK77B3640AGB
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| OCR Text |
... an SA address input in 8Mb and 16mb LW SRAMs. 3. Pad Location 2B is a true no-connect. However, it is defined as an SA address input in 16mb LW SRAMs.
4Mb, Sync LW, HSTL, rev 1.5
2 / 33
July 23, 1998
SONY(R)
CXK77B3640AGB / ... |
| Description |
4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
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| File Size |
283.45K /
33 Page |
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it Online |
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International Business Machines, Corp.
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| Part No. |
IBM11D4490BG
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| OCR Text |
...e ibm11d4490bg/ibm11d8490bg are 16mb/32mb industry standard 72-pin 4-byte single in-line memory modules (simm) that have fully func- tional, retrofittable and plug-compatible on-board error-correcting-code (ecc). the ecc function is complet... |
| Description |
4M x 36 ECC-on-SIMM w/ Error Lines(4M x 36动态RAM模块（片上带纠错代码功能 4米36 ECC的问题，上海药物研究所瓦特/错误行（4米36动态内存模块（片上带纠错代码功能）
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| File Size |
177.13K /
20 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT4LDT164HG MT8LDT264HG
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| OCR Text |
...e (dimm) ? 8mb (1 meg x 64) and 16mb (2 meg x 64) ? high-performance cmos silicon-gate process ? single +3.3v 0.3v power supply ? all inputs, outputs and clocks are ttl-compatible ? refresh modes: ras#-only, cas#-before-ras# (cbr) and hid... |
| Description |
1Meg x 64 DRAM SODIMMs(1M x 64动态RAM双列直插存储器模块（小外型封装）)
2Meg x 64 DRAM SODIMMs(2M x 64动态RAM双列直插存储器模块（小外型封装）)
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| File Size |
393.96K /
30 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT48LC1M16A1
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| OCR Text |
16mb: x16 it sdram micron technology, inc., reserves the right to change products or specifications without notice. 16msdramx16it.p65 ? rev. 5/99 ?1999, micron technology, inc. 1 16mb: x16 it sdram key timing parameters speed clock access t... |
| Description |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM（工业温度）)
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| File Size |
1,463.04K /
51 Page |
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Micron Technology, Inc.
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| Part No. |
MT55L256V18F1 MT55L256L18F1
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| OCR Text |
...ompatibility with 2mb, 8mb, and 16mb zbt sram family 165-pin fbga package 100-pin tsop package automatic power-down options marking* timing (access/cycle/mhz) 7.5ns/10ns/100 mhz -10 8.5ns/11ns/90 mhz -11 9ns/12ns/83 mhz -12 config... |
| Description |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
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| File Size |
443.11K /
25 Page |
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IBM Microeletronics
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| Part No. |
IBM03164B9C IBM0316809C
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| OCR Text |
16mb synchronous dram-die revision d 08j3348.e35853 5/98 ?ibm corporation. all rights reserved. use is further subject to the provisions at the end of this document. page 1 of 120 features ? high performance: ? single pulsed ras interface ?... |
| Description |
16mb Synchronous DRAM(16M位同步动态RAM)
16mbMbit x 8 I/O x 2 Bank）Synchronous DRAM(16M位（1Mx 8 I/O x 2 组）同步动态RAM)
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| File Size |
1,551.23K /
120 Page |
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it Online |
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Price and Availability
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