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1ns Datasheet PDF File

For 1ns Found Datasheets File :: 2381 Search Time::1.36ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S640432E-TC K4S640432E K4S640432E-L1H K4S640432E-L1L K4S640432E-L75
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
File Size	103.86K / 10 Page	View it Online	Download Datasheet

				MAXIM[Maxim Integrated Products]
Part No.	MAX9124 MAX9124ESE MAX9124EUE
OCR Text	...z, 50% duty cycle, RO = 50, tR 1ns, tF 1ns (0% to 100%). Note 7: tSKD1 is the magnitude difference of differential propagation delay. tSKD1 = \|tPHLD - tPLHD\|. Note 8: tSKD2 is the magnitude difference of tPHLD or tPLHD of one channel to t...
Description	Quad LVDS Line Driver
File Size	193.88K / 9 Page	View it Online	Download Datasheet

				MAXIM[Maxim Integrated Products]
Part No.	MAX9125 MAX9125ESE MAX9125EUE MAX9126ESE MAX9126EUE MAX9126
OCR Text	.../2\|, input rise and fall time = 1ns (20% to 80%), input frequency = 100MHz, TA = -40C to +85C. Typical values are at VCC = +3.3V, VCM = 1.2V, \|VID\| = 0.2V, TA = +25C, unless otherwise noted.) (Notes 3, 4) PARAMETER Differential Propagation...
Description	Quad LVDS Line Receivers with Integrated Termination
File Size	222.99K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640432D-TC_L80 K4S640432D K4S640432D-TC_L10 K4S640432D-TC_L1H K4S640432D-TC_L1L K4S640432D-TC_L75 K4S640432D-TC/L10 K4S640432D-TC/L1H K4S640432D-TC/L1L K4S640432D-TC/L75 K4S640432D-TC/L80
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM米4位4银行同步DRAM LVTTL
File Size	127.05K / 10 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HY5V26ELF-5I
OCR Text	... (input rise and fall time) is 1ns. if t r & t f > 1ns, then [(t r +t f )/2-1]ns should be added to the parameter. 2. access time to be measured with in put signals of 1v/ns edge rate, from 0.8v to 0.2v. if t r > 1ns, ...
Description	8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PBGA54
File Size	177.19K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S51163PF-YF K4S51163PF-F1L K4S51163PF-F90 K4S51163PF-Y K4S51163PF-YF750
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 8M x 16Bit x 4 Banks Mobile-SDRAM 8米16 × 4银行移动SDRAM
File Size	110.82K / 12 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	STLVDS3487BTR
OCR Text	...haracteristics: t r or t f 1ns, pulse repetition rate (prr) = 50mpps, pulse width = 10 0.2ns. note b: c l includes instrumentation and fixture capacitance within 6mm of the d.u.t figure 3. voltage and current definitions f...
Description	QUAD LINE DRIVER, PDSO16
File Size	215.77K / 16 Page	View it Online	Download Datasheet

For 1ns Found Datasheets File :: 2381 Search Time::1.36ms
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