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  2.32v Datasheet PDF File

For 2.32v Found Datasheets File :: 3149    Search Time::1.359ms    
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    LT1621 LT1621CGN LT1621IGN LT1620 LT1620CGN LT1620CMS8 LT1620CS8 LT1620IGN LT1620IS8 16201F

LINER[Linear Technology]
Part No. LT1621 LT1621CGN LT1621IGN LT1620 LT1620CGN LT1620CMS8 LT1620CS8 LT1620IGN LT1620IS8 16201F
OCR Text ...INTVCC 0.1F 6 VCC 1 8 SENSE AVG 2 7 IOUT PROG LT1620MS8 3 GND 4 5 IN - IN + 0.1F 3k 1% 15.75k 1% FB SW 27H 0.025 + VIN 22F 35V x2 ...32V VCC VCM 32V VID = 80mV 2 U U W WW U W TOP VIEW 16 AVG 15 NC 14 PROG 13...
Description From old datasheet system
Rail-to-Rail Current Sense Amplifier

File Size 282.19K  /  12 Page

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    AP9561GI-HF AP9561GI-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP9561GI-HF AP9561GI-HF-14
OCR Text ...atic drain-source on-resistance 2 v gs =-10v, i d =-30a - - 16 m ? v gs =-4.5v, i d =-20a - - 28 m ? v gs(th) gate threshold voltage v ds =v...32v, v gs =0v - - -10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total ga...
Description Lower Gate Charge, Simple Drive Requirement

File Size 90.75K  /  4 Page

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    AP9561GH-HF AP9561GJ-HF AP9561GJ-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP9561GH-HF AP9561GJ-HF AP9561GJ-HF-14
OCR Text ...hermal resistance junction-case 2.3 /w rthj-a 62.5 /w rthj-a maximum thermal resistance junction-ambient 110 /w data and specifications s...32v, v gs =0v - - -1 ua drain-source leakage current (t j =125 o c) v ds =-32v, v gs =0v - - -250 ua...
Description Simple Drive Requirement, Fast Switching Characteristic
Lower On-resistance, Simple Drive Requirement
45 A, 40 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252

File Size 93.84K  /  4 Page

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    AP9561AGJ-HF

Advanced Power Electronics Corp.
Part No. AP9561AGJ-HF
OCR Text ...hermal resistance junction-case 2.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to chang...32v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 57.48K  /  4 Page

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    IRL1404ZLPBF IRL1404ZPBF IRL1404ZSPBF

International Rectifier
Part No. IRL1404ZLPBF IRL1404ZPBF IRL1404ZSPBF
OCR Text ...- --- --- --- --- --- --- 0.034 2.5 --- --- --- --- --- --- --- --- 75 28 40 19 180 30 49 4.5 7.5 5080 970 570 3310 870 1280 --- --- 3.1 4.7...32V VGS = 5.0V VDD = 20V ID = 75A ns RG = 4.0 VGS = 5.0V D Between lead, e e e e e nH 6m...
Description AUTOMOTIVE MOSFET HEXFET? Power MOSFET
AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET

File Size 787.62K  /  13 Page

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    IRFBA1404 IRFBA1404P

IRF[International Rectifier]
Part No. IRFBA1404 IRFBA1404P
OCR Text ... force Max. 206 145 650 300 2.0 20 See Fig.12a, 12b, 15, 16 30 5.0 -40 to + 175 -55 to + 175 300 (1.6mm from case ) 20 Units A W W/...32V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 95A --- nC VDS = 32V 60 VGS = 10V...
Description Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)
Power MOSFET(Vdss=40V/ Rds(on)=3.7mohm/ Id=206A)

File Size 113.34K  /  9 Page

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    AP9561AGI-HF AP9561AGI-HF14

Advanced Power Electronics Corp.
Part No. AP9561AGI-HF AP9561AGI-HF14
OCR Text ...rmal resistance junction-case 4.2 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change w...32v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 58.07K  /  4 Page

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    AP9560GS-HF AP9560GS-HF14

Advanced Power Electronics Corp.
Part No. AP9560GS-HF AP9560GS-HF14
OCR Text ...hermal resistance junction-case 2.3 /w rthj-a 40 /w data and specifications subject to change without notice total power dissipation opera...32v, v gs =0v - - -10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total ga...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 56.11K  /  4 Page

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    IRL1404PBF

International Rectifier
Part No. IRL1404PBF
OCR Text ... = 20V ns --- ID = 95A --- RG = 2.5 VGS = 4.5V --- RD = 0.25 D Between lead, --- nH 6mm (0.25in.) G from package --- and center of die cont...32V, = 1.0MHz --- VGS = 0V, VDS = 0V to 32V Source-Drain Ratings and Characteristics IS ISM ...
Description HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 4.0mΩ , ID = 160A )
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 4.0mヘ , ID = 160A )

File Size 126.38K  /  9 Page

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