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  2.52a Datasheet PDF File

For 2.52a Found Datasheets File :: 443    Search Time::1.203ms    
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    BSS84 BSS84-NL

Fairchild Semiconductor Corporation
Part No. BSS84 BSS84-NL
OCR Text ... A W mW/C C -0.13 -0.52 0.36 2.9 -55 to +150 300 (Note 1) Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Thermal Characteristics RJA Thermal Resi...
Description ?.13A, ?0V. RDS(ON) = 10Ω @ VGS = ? V
RP10 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 15V; 4:1 Wide Input Voltage Range; 10 Watts
P-Channel Enhancement Mode Field Effect Transistor

File Size 137.68K  /  5 Page

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    2SK3828

Sanyo Semicon Device
Part No. 2SK3828
OCR Text ...le Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 52 208 1....52A *2 L200H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakd...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 38.48K  /  4 Page

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    ASTEC[Astec America, Inc]
Part No. AA25N-048L-050T120 AA25N-048L-033S AA25N-048L-050S AA25N AA25N-024L-120S AA25N-024L-150D AA25N-048L-050D033
OCR Text ...0mS (012L) <10mA (P-P) See Note 2 Vin<32V (-048L ONLY) 82% typical Main Output 1.0% Aux Output 3.0% Dual Output 2.0% Main Output 0.1% Aux Ou...52A -12V @ 0.52A Notes: Max output power not to exceed 25W total. The sum of output currents n...
Description 25 Watts

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    Advanced Power Technology Ltd.
Part No. APT50M80JLC
OCR Text ... Parameter SO ISOTOP (R) 2 T- 27 "UL Recognized" * Lower Input Capacitance * Easier To Drive * Popular SOT-227 Package D ...52A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description POWER MOS IV 500V 52A 0.080 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.91K  /  2 Page

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    SANYO
Part No. FW231
OCR Text 2.5V drive. Package Dimensions unit:mm 2129 [FW231] 8 5 0.3 4.4 6.0 0.2 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25...52A 10 Switching Time, SW Time - ns 5 3 2 10s 1m s ID=9A DC ms 10 op era 0m s...
Description N-Channel Silicon MOSFET Load Switching Applications

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    2SK4125

Sanyo Semicon Device
Part No. 2SK4125
OCR Text ...le Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C (SANYO's ideal heat dissipation con...52A ID=17A PW10s 10 s 10 Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 ...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 47.61K  /  5 Page

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    NLP25-7605 NLP25-7607 NLP25-7608 NLP25-7624 NLP25-7629 NLP25-7617 NLP25 NLP25-7612

ARTESYN[Artesyn Technologies]
Part No. NLP25-7605 NLP25-7607 NLP25-7608 NLP25-7624 NLP25-7629 NLP25-7617 NLP25 NLP25-7612
OCR Text ...ch Mode Power Supplies 1 4.00 x 2.07 x 0.91 inch package Overvoltage protection and short circuit protection 25W with free air convection co...52A PEAK 2.5A 1.2A (1) 0.2A 0.1A 0A 0.2A 0.1A 0A 0.2A 0.1A 0A 0A 0A 0A 50mV 120mV 50mV 5...
Description LOW TO MEDIUM POWER AC/DC POWER SUPPLIES

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    APT33GF120B2RD APT33GF120LRD

Advanced Power Technology Ltd.
Part No. APT33GF120B2RD APT33GF120LRD
OCR Text ...or 10 Sec. M 1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.5 2 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE =...
Description Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.

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    IRF2204LPBF IRF2204SPBF

International Rectifier
Part No. IRF2204LPBF IRF2204SPBF
OCR Text ...Capacitance Min. 40 --- --- 2.0 120 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.041 3.0 --...52A 91A 130A EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 600 BOTTOM RG ...
Description HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mΩ , ID = 170A )
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mヘ , ID = 170A )

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    APL502J

Advanced Power Technolo...
Advanced Power Technology
Part No. APL502J
OCR Text ... S D S SO ISOTOP (R) 2 T- 27 "UL Recognized" * Higher FBSOA * Popular SOT-227 Package G D * Higher Power Dissi...52A @ 25C RG = 0.6 MIN TYP MAX APL502J UNIT 7600 1280 620 13 24 58 14 9000 1810 930 26 48 ...
Description LINEAR MOSFET

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