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Galvantech
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Part No. |
GVT71256ZB36 256ZB36
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OCR Text |
... OUTPUT +3.3V SUPPLY, +3.3V or +2.5V I/O
FEATURES
* * * * * * * * * * * * * * * Zero Bus Latency, no dead cycles between write and read cy...5G 3G 3L
Synchronous Address Inputs: The address register is triggered by a combination of the ri... |
Description |
256K X 36/512K X 18 ZBL SRAM From old datasheet system
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File Size |
237.38K /
27 Page |
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Download Datasheet
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Galvantech
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Part No. |
GVT71256ZC36 256ZC36
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OCR Text |
... and 100MHz Fast access time: 3.2, 3.6, 4.2, 5.0ns Internally synchronized registered outputs eliminate the need to control OE# Single 3.3V ...5G 3G 3L
SYMBOL
SA0, SA1, SA
TYPE
InputSynchronous
Synchronous Address Inputs: The addres... |
Description |
256K X 36/512K X 18 ZBL SRAM From old datasheet system
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File Size |
290.28K /
27 Page |
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it Online |
Download Datasheet
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R321884M-FC25 K7R323684M-FC16 K7R323684M K7R323684M-FC25 K7R323684M-FC20 K7R640982M K7R323682
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OCR Text |
... from 13mmx15mm to 15mmx17mm 1. 2. 3. 4. 5. 6. Pin name change from DLL to Doff. Vddq range change from 1.5V to 1.5V~1.8V. Update JTAG test ...5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,... |
Description |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 1Mx36 & 2Mx18 QDRTM II b4 SRAM
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File Size |
193.61K /
18 Page |
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it Online |
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Linear
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Part No. |
LTC4555
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OCR Text |
...shifting needed for low voltage 2.5g and 3G cellular telephones to interface with 1.8V or 3V subscriber identity modules (SIMs). The part meets all type approval requirements for 1.8V and 3V SIMs and smart cards. The part contains an LDO li... |
Description |
1.8V/3V SIM Power Supply and Level Translator
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File Size |
116.18K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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