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Mitsubishi Electric Sem...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
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| Part No. |
M30623MCA-B72GP M30625MGN-A25GP M30623M4T-245GP
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| OCR Text |
................................ 4.2 to 5.5v (f(x in )=16mh z , without software wait) : mask rom, flash memory 5v version 4.5 to 5.5v (f(x in ...9ns (f(x in )=7mh z , v cc =3v, with software one-wait) : one-time prom version memory rom (see the ... |
| Description |
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 单片16位CMOS微机
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| File Size |
2,911.11K /
230 Page |
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it Online |
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Sony
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| Part No. |
CXK77B1840AGB CXK77B3640AGB
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| OCR Text |
...tKHQV -----------------3.45ns / 2.25ns 3.8ns / 2.25ns 3.8ns / 2.25ns 5.0ns / 2.50ns R-L, R-FT Modes tKHKH / tKHQV -----------------4.8ns / 4...9ns 3.8ns / 4.9ns 4.0ns / 5.2ns 4.5ns / 6.0ns
Note: Contact Sony Memory Marketing for availabilit... |
| Description |
4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
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| File Size |
283.45K /
33 Page |
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it Online |
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Lattice Semiconductor Corporation
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| Part No. |
LX64B-5FN100C LX64B-5F100C LX128B-5FN208C LX128B-32F208C
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| OCR Text |
... = 360MHz - tPD = 3.0ns - tCO = 2.9ns - tS = 2.0ns * Built-in programmable control logic capability * I/O intensive: 64 to 256 I/Os * Expanded MUX capability up to 188:1 MUX * * * * Frequency synthesis and skew management Clock multiply and... |
| Description |
ispGDX2?Device Datasheet
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| File Size |
676.53K /
75 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K4S28163LD-RFR
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| OCR Text |
2.5V, VDDQ 1.8V & 2.5V)
Preliminary
K4S28163LD-RG(S)
CMOS SDRAM
8Mx16 Mobile SDRAM
(PASR & TCSR, -25C ~ 85C Operation)
Revis...9ns and CL2 tSAC from 7ns to 9ns, CL1 tSAC from 22ns to 24ns for -15 part. * Changed of tOH from 3ns... |
| Description |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
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| File Size |
97.04K /
12 Page |
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it Online |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
M30621MCM-F52GP M30621MCM-5P4GP M30621MCM-F40GP M30625FGMGP M30621FGMGP
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| OCR Text |
... 100ns (f(x in )=10mh z , v cc =2.7v to 3.6v) 142.9ns (f(x in )=7mh z , v cc =2.2v to 3.6v, with software one-wait) ? supply voltage ..................................... 2.7v to 3.6v (f(x in )=10mh z, without software wait) 2.4v to 2.7v (... |
| Description |
RESISTOR, 330 (5V LED DROP)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 单片16CMOS微机
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 单片16位CMOS微机
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| File Size |
254.41K /
24 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K4S56163LC-RFR
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| OCR Text |
2.5V, VDDQ 1.8V & 2.5V)
K4S56163LC-RF(R)
CMOS SDRAM
16Mx16 Mobile DRAM
(TCSR & PASR option support)
Revision 0.4 December 2001
...9ns and CL2 tSAC from 7ns to 9ns, CL1 tSAC from 22ns to 24ns for -15 part. * Changed of tOH from 3ns... |
| Description |
4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Data Sheet
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| File Size |
701.92K /
49 Page |
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it Online |
Download Datasheet |
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Price and Availability
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