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  20a 1200v Datasheet PDF File

For 20a 1200v Found Datasheets File :: 396    Search Time::1.297ms    
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    IRGP20B120U-EP

International Rectifier
Part No. IRGP20B120U-EP
OCR Text ...) typ. = 3.05V VGE = 15V, IC = 20a, 25C Benefits Benchmark efficiency above 20KHz Optimized for Welding, UPS, and Induction Heating a...1200v A VGE = 0V, VCE = 1200v, TJ =125C VGE = 0V, VCE = 1200v, TJ =150C nA VGE = 20V Sw...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 174.84K  /  10 Page

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    APT40DQ120BCT APT40DQ120BCTG

Advanced Power Technology
Part No. APT40DQ120BCT APT40DQ120BCTG
OCR Text ... 3000 2500 2000 1500 1000 500 0 20a 40A T = 125C J V = 800V R 600 trr, REVERSE RECOVERY TIME (ns) 500 400 300 200 100 0 APT40DQ120BCT(G) T = 125C J V = 800V R IF, FORWARD CURRENT (A) 80A 40A 20a TJ = 175C 0 0 200 40...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 128.23K  /  4 Page

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    IRG4PH50U

IRF[International Rectifier]
Part No. IRG4PH50U
OCR Text ...0V, IC = 1.0mA -- 2.56 3.5 IC = 20a -- 2.78 3.7 IC = 24A VGE = 15V Collector-to-Emitter Saturation Voltage V See Fig.2, 5 -- 3.20 -- IC = 45...1200v Zero Gate Voltage Collector Current -- -- 2.0 A VGE = 0V, VCE = 24V, TJ = 25C -- -- 5000 VGE =...
Description 1200v UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v Vce(on)typ.=2.78V @Vge=15V Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

File Size 132.34K  /  8 Page

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    http://
Part No. APTM120DA30CT1G
OCR Text ... diode forward voltage i f = 20a t j = 175c 2.3 3 v q c total capacitive charge i f = 20a, v r = 600v di/dt =1000a/s 80 nc f = 1mhz, v r = 200v 192 c total capacitance f = 1mhz, v r = 400v 138 pf th...
Description MOSFET SiC chopper diode

File Size 190.64K  /  5 Page

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    CMF20120D

Cree, Inc
Part No. CMF20120D
OCR Text ...P limited by Tjmax TC =25C ID = 20a, VDD = 50 V, L = 9.5 mH tAR limited by Tjmax ID = 20a, VDD = 50 V, L = 3 mH tAR limited by Tjmax TC=2...1200v, VGS = 0V, TJ = 25C VDS = 1200v, VGS = 0V, TJ = 125C VGS = 20V, VDS = 0V VGS = 20V, ID = 20a, ...
Description Silicon Carbide Power MOSFET

File Size 2,162.93K  /  13 Page

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    7MBR10SC120

Fuji Electric
Part No. 7MBR10SC120
OCR Text ... : Ic [ A ] 6 10 4 Ic= 20a 2 Ic= 10A Ic= 5A 5 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) ...
Description PIM/Built-in converter with thyristor and brake (S series) 1200v / 10A / PIM

File Size 413.18K  /  7 Page

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    7MBR10SA120

FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 7MBR10SA120
OCR Text ...[ A ] 15 6 10 4 Ic= 20a 2 Ic= 10A Ic= 5A 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) 5000 ...
Description    IGBT(1200v/10A)

File Size 618.80K  /  7 Page

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    7MBI40N-120

Fuji Electric
Part No. 7MBI40N-120
OCR Text ...ge : V 6 4 IC= 80A 40A 20a 4 IC= 80A 2 2 40A 20a 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =600V, R G =24 ,...
Description IGBT(1200v/40A)

File Size 198.21K  /  8 Page

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    CAS100H12AM1

Cree, Inc
Part No. CAS100H12AM1
OCR Text ... 16 20 m? v gs = 20v, i d = 20a fig 4 20 24 v gs = 20v, i d = 20a , t j = 150oc g fs transconductance 31 s v ds = 20v , i d = 100a fig 5 32 v ds = 20v , i d = 100a, t j = 150oc c iss input capacitance 9500 pf v ds =...
Description 1200v, 100A Silicon Carbide Half-Bridge Module

File Size 506.58K  /  7 Page

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