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  20mh Datasheet PDF File

For 20mh Found Datasheets File :: 272    Search Time::1.453ms    
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    FFPF12UP20DP F12UP20DP

FAIRCHILD[Fairchild Semiconductor]
Part No. FFPF12UP20DP F12UP20DP
OCR Text ...J * Avalanche Energy (L = 20mh) * Pulse Test: Pulse Width=300s, Duty Cycle=2% Test Circuit and Waveforms FFPF12UP20DP Rev. A 2 www.fairchildsemi.com FFPF12UP20DP Ultrafast Recovery Power Rectifier Typical Performa...
Description Ultrafast Recovery Power Rectifier

File Size 152.45K  /  5 Page

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    STK64X50LM

AUK corp
Part No. STK64X50LM
OCR Text ...Maximum Junction Temperature L=20mh, IAS=0.64A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T0H015-000 3 STK64X50LM Electrical Characteristic Curves Fig. 1 ...
Description Advanced Power MOSFET

File Size 364.21K  /  8 Page

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    STK0160I

AUK corp
Part No. STK0160I
OCR Text ...Maximum Junction Temperature L=20mh, IAS=1.0A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T6Q001-000 3 STK0160I Electrical Characteristic Curves Fig. 1 ID ...
Description Advanced Power MOSFET

File Size 359.84K  /  8 Page

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    STK0160

AUK corp
Part No. STK0160
OCR Text ...Maximum Junction Temperature L=20mh, IAS=0.4A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T0H008-001 3 STK0160 Electrical Characteristic Curves Fig. 1 ID -...
Description Advanced Power MOSFET

File Size 453.99K  /  8 Page

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    STK830P

AUK corp
Part No. STK830P
OCR Text ...maximum junction temperature L=20mh, IAS=4.5A, VDD=50V, RG=27 Pulse Test : Pulse width 400 , Duty cycle 2% Essentially independent of operating temperature KSD-T0P009-000 3 STK830P Electrical Characteristic Curves Fig. 1 ID - ...
Description Advanced Power MOSFET

File Size 395.50K  /  8 Page

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    SFU9230B SFR9230B

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. SFU9230B SFR9230B
OCR Text ...mum junction temperature 2. L = 20mh, IAS = -5.4A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -6.5A, di/dt 400A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating...
Description 200V P-Channel MOSFET

File Size 626.25K  /  9 Page

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    AP02N90I

Advanced Power Electronics Corp.
Part No. AP02N90I
OCR Text ....Starting Tj=25 C , VDD=50V , L=20mh , RG=25[ 3.Pulse width <300us , duty cycle <2%. o , IAS=1.9A. 2/4 AP02N90I 2.0 1.25 T C =25 C 1.6 o ID , Drain Current (A) 1.2 ID , Drain Current (A) 10V 8.0V 6.0V 5.0V ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 37.77K  /  4 Page

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    STK55X40LM

AUK corp
Part No. STK55X40LM
OCR Text ...Maximum Junction Temperature L=20mh, IAS=0.55A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T0H012-000 3 STK55X40LM Electrical Characteristic Curves Fig. 1 ...
Description Advanced Power MOSFET

File Size 359.84K  /  8 Page

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    STK58X60LM

AUK corp
Part No. STK58X60LM
OCR Text ...Maximum Junction Temperature L=20mh, IAS=0.58A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T0H016-000 3 STK58X60LM Electrical Characteristic Curves Fig. 1 ...
Description Advanced Power MOSFET

File Size 360.76K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. RHRD660S FN3746 RHRD660
OCR Text ...trr TEST CIRCUIT IMAX = 1A L = 20mh R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 9. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGU...
Description 6A, 600V Hyperfast Diodes(6A,600V 超快速二极管)
6A/ 600V Hyperfast Diodes
6A 600V Hyperfast Diodes
From old datasheet system

File Size 70.44K  /  4 Page

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For 20mh Found Datasheets File :: 272    Search Time::1.453ms    
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