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22mh Datasheet PDF File

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				FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
Part No.	FQP17P10
OCR Text	...-100 -16.5 -11.7 -66 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed...2mH, IAS = -16.5A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -16.5A, di/dt 300A/s, VDD BVDSS...
Description	100V P-Channel MOSFET
File Size	666.33K / 8 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	HGTG10N120BND FN4579
OCR Text	...ting Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . ....2mH Test Circuit (Figure 20) 2 HGTG10N120BND Electrical Specifications PARAMETER Current Tur...
Description	From old datasheet system 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	81.64K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRFP9240 FN2294
OCR Text	...-200 -200 -12 -7.5 -48 20 150 1.2 790 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1)...2mH, RG = 50, peak IAS = 12A (Figures 15, 16). Typical Performance Curves 1.2 POWER DISSIPATION ...
Description	From old datasheet system 12A 200V 0.500 Ohm P-Channel Power MOSFET 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET
File Size	55.82K / 7 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC3152
OCR Text	...300s, Duty Cycle10% 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Conditions Ratings 900 800 7 3 10 1.5 80 150 -55 to +150 U...2mH, clamped VCEX(sus)2 IC=0.5A, IB1=0.4A, IB2=-0.1A, L=5mH, clamped ton tstg tf IC=2A, IB1=0...
Description	NPN Triple Diffused Planar Silicon Transistor
File Size	101.58K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG11N120CND FN4580
OCR Text	2 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. T...2mH, Test Circuit (Figure 20) 2 HGTG11N120CND Electrical Specifications PARAMETER Current Tu...
Description	43A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
File Size	81.13K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRL7N1404 2293
OCR Text	...5* 55* 220 100 0.8 20 300 55 10 2.0 -55 to 150 300 (for 5s) 2.6 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com ...2mH Peak IAS = 55A, VGS = 10V, RG= 25 ISD 55A, di/dt 166A/s, Pulse width 300 s; Duty Cycle ...
Description	HEXFET POWER MOSFET SURFACE MOUNT (SMD-1) From old datasheet system HEXFET? Power MOSFET
File Size	112.24K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicro
Part No.	2N6111 BUX98AP 5253
OCR Text	...NG INDUSTRIAL EQUIPMENT s 3 2 1 DESCRIPTION The BUX98AP is a silicon multiepitaxial mesa NPN transistor in jedec TO-218 plastic packa...2mH I C = 16 A I C = 16 A V CC = 150 V I B1 = - I B2 = 4 A V CC = 150 V I B1 = - I B2 = 3.2 A I C = ...
Description	From old datasheet system HIGH POWER NPN SILICON TRANSISTOR SILICON PNP SWITCHING TRANSISTORS
File Size	61.13K / 4 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC3457
OCR Text	...-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Conditions Ratings 1100 800 7 3 10 1.5 50 150 -55 to +150 Unit V V V A A ...2mH, clamped ton VCC=400V, 5IB1=-2.5IB2=IC=2A, RL=200 tstg VCC=400V, 5IB1=-2.5IB2=IC=2A, RL=200 tf V...
Description	NPN Triple Diffused Planar Type Silicon Transistor
File Size	114.56K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	FQD10N20C FQU10N20C FQD10N20CTM FQD10N20CTF FQU10N20CTU
OCR Text	...N20C / FQU10N20C 200 7.8 5.0 31.2 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage ...2mH, IAS = 7.8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9.5A, di/dt 300A/s, VDD BVDSS, Sta...
Description	200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
File Size	586.86K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG10N120BND
OCR Text	...35 17 80 20 30 55A at 1200V 298 2.38 -55 to 150 260 8 15 UNITS V A A A V V W W/oC oC oC s s Collector to Emitter Voltage . . . . . . . . ...2mH Test Circuit (Figure 20) (c)2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev. B ...
Description	36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247 35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	109.35K / 8 Page	View it Online	Download Datasheet

For 22mh Found Datasheets File :: 835 Search Time::4.078ms
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