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Advanced Power Electronics ...
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Part No. |
AP9965GYT-HF
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OCR Text |
...reakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =9a - 17 21 m v gs =4.5v, i d =5a - 22 28 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 1.4 2.5 v g fs forward tran... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
57.06K /
4 Page |
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it Online |
Download Datasheet
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Advanced Power Electronics ...
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Part No. |
AP09T10GP-HF
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OCR Text |
...reakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3a - - 300 m v gs =4.5v, i d =1.5a - - 600 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transco... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
46.60K /
4 Page |
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it Online |
Download Datasheet
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Xian Semipower Electronic Technology Co., Ltd.
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Part No. |
SWF5N80
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OCR Text |
...reakdown voltage v gs =0v, i d =250ua 800 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.5 - v/ o c i dss drain to source leakage current v ds =800v, v gs =0v - - 10 ua v ds =640v, t c =125... |
Description |
N-channel MOSFET
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File Size |
765.94K /
7 Page |
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it Online |
Download Datasheet
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