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Samsung Electronic
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| Part No. |
K4E16708112D K4E160811D K4E160811D-B K4E160811D-F K4E160812D K4E160812D-B K4E160812D-F K4E170811D K4E170811D-B
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| OCR Text |
... 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 pin configuration (top views) pin name pin function a0 - a11 ad...column address strobe w read/write input oe data output enable v cc power(+5v) power(+3.3v) n.c no c... |
| Description |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
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| File Size |
254.30K /
21 Page |
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MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
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| Part No. |
V43648Y04VCTG-10PC
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| OCR Text |
...SS VSS DQMB0 DQMB4 Pin 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Front DQMB1 DQMB5 VDD VDD A0 A3 A1 A4 A2 A5 V...Column Address Strobes Write Enable Chip Select Output Enable Clock Enable Clock Serial Input/Output... |
| Description |
3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM
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| File Size |
53.43K /
10 Page |
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Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS41C82002-50J
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| OCR Text |
...and is41lv82002 are packaged in 28-pin 300-mil soj and 28-pin tsop (type ii) with jedec standard pinouts. 2m x 8 (16-mbit) dynamic ...column address access time (t aa ) 25 30 ns edo page mode cycle time (t pc ) 20 25 ns read/write cy... |
| Description |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
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| File Size |
187.18K /
18 Page |
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it Online |
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Samsung Electronic
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| Part No. |
M377S6453AT0SDRAMDIMMINTEL1.2VERB
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| OCR Text |
...time (=t rp ) 20ns 20ns 14h 14h 28 minimum row active to row active delay (t rrd ) 20ns 20ns 14h 14h 29 minimum ras to cas delay (=t rcd ) 2...column address on this assembly 11 0bh 1 5 # of module rows on this assembly 1 row 01h 6 data width... |
| Description |
64Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD Serial Presence Detect
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| File Size |
68.31K /
9 Page |
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it Online |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM51V17800F-70TS-K
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| OCR Text |
... msm51v17800f is available in a 28-pin plastic soj or 28-pin plastic tsop. features ? 2,097,152-word 8-bit configuration ? single 3.3...column address strobe dq1?dq8 data input/data output oe output enable we write enable v cc power sup... |
| Description |
2,097,152-Word 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
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| File Size |
206.36K /
15 Page |
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it Online |
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Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
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| Part No. |
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800CJ GM71C17800CLJ-5 GM71C17800CLJ-6 GM71C17800C-6 GM71C17800CLJ-7 GM71C17800CCL GM71S17800CCL GM71CS17800CLT-7 GM71C17800CT-5 GM71CS17800CLT-6 GM71C17800CT-7 GM71C17800CJ-7
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| OCR Text |
...lastic SOJ, and standard 400mil 28 pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely av...Column Address Strobe
Pin
WE OE VCC VSS NC
Function
Read/Write Enable Output Enable Power (+... |
| Description |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
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| File Size |
91.13K /
9 Page |
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it Online |
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Price and Availability
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