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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDMS8660S
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OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDMS8660S Rev.C (W)
2
www.fairchildsemi.com
FDMS8660S N-Channel PowerTrench(R) SyncFETTM
Typical Characteristics TJ = 25C unless otherwise noted
120 100
ID, DRAIN CUR... |
Description |
N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM)
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File Size |
373.70K /
8 Page |
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Diodes, Inc.
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Part No. |
BAS70DW-05-7
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OCR Text |
...te 2) v f 410 1000 mv mv t p <300s, i f = 1.0ma t p <300s, i f = 15ma reverse current (note 2) i r 100 na t p < 300s, v r = 50v total capacitance c t 2.0 pf v r = 0v, f = 1.0mhz reverse recovery time t rr 5.0 ns i f = i r = 10ma to ... |
Description |
0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE ULTRA SMALL, PLASTIC PACKAGE-6
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File Size |
67.15K /
3 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDZ191P
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OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDZ191P Rev.F (W)
2
www.fairchildsemi.com
www.DataSheet4U.com
FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET
Typical Characteristics TJ = 25C unless otherwise no... |
Description |
P-Channel 1.5V PowerTrench WL-CSP MOSFET
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File Size |
387.58K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDZ193P
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OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDZ193P Rev.C1 (W)
2
www.fairchildsemi.com
P-Channel 1.7V PowerTrench(R) WL-CSP MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
16 14
-ID, DRAIN CURREN... |
Description |
P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mohm
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File Size |
207.49K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDZ493P
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OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDZ493P Rev.B(W)
2
www.fairchildsemi.com
FDZ493P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
10
DRAIN T... |
Description |
P-Channel 2.5V Specified PowerTrench BGA MOSFET -20V, -4.6A, 46mohm
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File Size |
365.73K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRF7210
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OCR Text |
...oard, t<10 sec
Pulse width 300s; duty cycle 2%.
2
www.irf.com
IRF7210
20
VGS -1.8V -1.6V -1.4V -1.2V -1.0V BOTTOM -0.8V TOP
300s PULSE WIDTH TJ = 25C
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-I , Drain-to-Source Current (A) D
-I , Drain-to-Sou... |
Description |
HEXFET Power MOSFET
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File Size |
138.32K /
7 Page |
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it Online |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRF7220
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OCR Text |
...See Figure 10)
Pulse width 300s; duty cycle 2%.
2
www.irf.com
IRF7220
80
VG S - 4 .5V - 4.0 V - 3.0 V - 2.0 V - 1.8 V - 1.6 V - 1.4 V BO TTO M - 1.2 V TO P
60
-I D , D rain-to -S ource C urrent (A )
-ID , D ra in-t... |
Description |
HEXFET Power MOSFET HEXFET功率MOSFET
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File Size |
137.51K /
7 Page |
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it Online |
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NTE Electronics, Inc. NTE[NTE Electronics]
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Part No. |
NTE66
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OCR Text |
...ote 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. Note 3. L = 0.53mH, Vdd = 25V, RG = 25, Starting TJ = +25C.
Electrical Characteristics: (TC = +25C unless ... |
Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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File Size |
26.14K /
3 Page |
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NTE Electronics, Inc. NTE[NTE Electronics]
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Part No. |
NTE67
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OCR Text |
...ote 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. Note 3. L = 17mH, Vdd = 50V, RG = 25, Starting TJ = +25C.
Electrical Characteristics: (TC = +25C unless ot... |
Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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File Size |
26.12K /
3 Page |
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it Online |
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http://
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Part No. |
BAS40WS-T1
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OCR Text |
...00 1000 mv @ i f = 1.0ma, t < 300s @ i f = 10ma, t < 300s @ i f = 40ma, t < 300s reverse leakage current i r ? 20 200 na @ v r = 30v, t < 300s junction capacitance c j ?4.05.0pf v r = 0v, f = 1.0mhz reverse recovery time t rr ??... |
Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
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File Size |
33.67K /
3 Page |
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it Online |
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