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C3200 32LD320N GRM1555C S25A3100 1N4106 SP207BCT HEF40 10165N
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  31.0 Datasheet PDF File

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NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. NDL7408PLD NDL7001 NDL7001L NDL7401P NDL7408P NDL7408P1K NDL7408P1KC NDL7408P1KD NDL7408P1L NDL7408P1LC NDL7408P1LD NDL7408P2K NDL7408P2KC NDL7408P2KD NDL7408P2L NDL7408P2LC NDL7408P2LD NDL7408P4K NDL7408P4KC NDL7408P4KD NDL7408P4L NDL7408P4LC NDL7408P4LD NDL7408PK NDL7408PKC NDL7408PKD NDL7408PL NDL7408PLC
OCR Text 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER DESCRIPTION NDL7408P Series is a 1 310 nm laser diode coaxial module with single mode fiber. It has a strained Multiple Quantum Well (st-MQW) structure...
Description Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER 1 310纳米InGaAsP的应变量子阱的DC -异质结半导体激光器同轴模块与单模光

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    ONSEMI[ON Semiconductor]
Part No. NCP700MN300R2G NCP700 NCP700MN180R2G NCP700MN280R2G
OCR Text ...d Vn ILIM ISC VDO 150 150 15 20 310 320 105 100 470 490 155 150 mA mA mV -0.2 80 80 65 12 5.5 1.836 2.856 3.060 1.854 2.884 3.090 0.2 25 %/V mV mVrms V V Test Conditions Symbol Min Typ Max Unit Output Voltage (Note 3) Vout V Pow...
Description Ultra Low Noise, High PSSR,BiCMOS RF LDO Regulator

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    EC6A15S EC6A14S EC6A25S EC6A24S EC6A26 EC6A12S EC6A16 EC6A17 EC6A01 EC6A02S EC6A01S EC6A04 EC6A03 EC6A04S EC6A05 EC6A05S

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Part No. EC6A15S EC6A14S EC6A25S EC6A24S EC6A26 EC6A12S EC6A16 EC6A17 EC6A01 EC6A02S EC6A01S EC6A04 EC6A03 EC6A04S EC6A05 EC6A05S EC6A03S EC6A06 EC6A07 EC6A11S EC6A13 EC6A13S EC6A23S EC6A22 EC6A21S EC6A22S EC6A27 EC6A06S EC6A16S EC6A17S EC6A07S
OCR Text ...f ec6a05 9-18vdc 12vdc 0 ma 310 ma 30 ma 753 ma 83 2200uf ec6a06 9-18vdc 15vdc 0 ma 250 ma 30 ma 753 ma 83 2200uf ec6a07 9-18vdc 3.3vdc 0 ma 1500 ma 25 ma 529 ma 78 4700uf ec6a11 18-36vdc 5vdc 0 ma 1500 ma 20 ma 377 ma ...
Description 7.5WATT 2:1 INPUT RANGE DC-DC CONVERTERS

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    IRFPS40N50LPBF

International Rectifier
Part No. IRFPS40N50LPBF
OCR Text ...0 69 8110 960 130 11200 240 440 310 --- 380 80 190 --- --- --- --- --- --- --- --- --- --- --- pF ns nC S Conditions VDS = 50V, ID = 46A ID = 46A VDS = 400V VGS = 10V, See Fig. 7 & 15 VDD = 250V ID = 46A RG = 0.85 VGS = 10V, See Fig. 14...
Description 46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-274AA
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET

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    PMEG2002AESF

NXP Semiconductors
Part No. PMEG2002AESF
OCR Text ... s; 0.02 ; t j = 25 c - 245 310 mv i r reverse current v r = 10 v; t j = 25 c - 5 - a [1] device mounted on a ceramic printed-circuit board (pcb), al 2 o 3 , standard footprint. nxp semiconductors pmeg2002aesf 20 v, 0.2 a low vf meg...
Description 20 V, 0.2 A low VF MEGA Schottky barrier rectifier

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    IRG4PC40FPBF IRG4PC40FPBF-15

International Rectifier
Part No. IRG4PC40FPBF IRG4PC40FPBF-15
OCR Text ...40 170 0.37 1.81 2.18 25 21 380 310 3.9 13 2200 140 29 Max. Units Conditions 150 IC = 27A 23 nC VCC = 400V See Fig. 8 53 VGE = 15V TJ = 25C ns 360 IC = 27A, VCC = 480V 250 VGE = 15V, RG = 10 Energy losses include "tail" mJ See Fig. 10, ...
Description INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT

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    IRG4PC60FPBF

International Rectifier
Part No. IRG4PC60FPBF
OCR Text ... Typ. 290 40 100 42 66 310 170 0.30 4.6 4.9 39 66 470 300 8.8 13 6050 360 66 Max. Units Conditions 340 IC = 40A 47 nC VCC = 400V See Fig. 8 130 VGE = 15V TJ = 25C ns 360 IC = 60A, VCC = 480V 220 VGE = 15V, RG = 5.0 Energy losses...
Description INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT

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Part No. SBU6D
OCR Text ... weight:0.3ounces(8grams) tel.:(310)767-1052fax:(310)767-7958 diotecelectronicscorp. gardena,ca90248u.s.a 18020hobartblvd.,unitb maximumratings&electricalcharacteristics ratingsat25cambienttemperatureunlessotherwisespecified.singlephase,60h...
Description 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

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    IRG4PC60UPBF

International Rectifier
Part No. IRG4PC60UPBF
OCR Text ...---------------------------Typ. 310 41 110 39 42 200 100 0.28 1.1 1.3 36 42 300 160 2.6 13 5860 370 75 Max. Units Conditions 320 IC = 40A 46 nC VCC = 480V See Fig. 8 120 VGE = 15V ------TJ = 25C ns IC = 40A, VCC = 480V VGE = 15V, RG = 5.0 -...
Description    INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

File Size 229.98K  /  9 Page

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