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Hanbit Electronics Co., Ltd.
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| Part No. |
WED3DG6433V-D1
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| OCR Text |
...M module which consists of four 32mx16 SDRAM components in TSOP- 11 package, and one 2K EEPROM in an 8- pin TSSOP package for Serial Presence Detect which are mounted on a 144 Pin SODIMM multilayer FR4 Substrate.
PIN CONFIGURATIONS (FRON... |
| Description |
SDRAM Modules - 144 Pin SO-DIMM. Unbuffered 内存模块- 144引脚SO - DIMM内存。无缓冲
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| File Size |
440.32K /
6 Page |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4H510438B-ZC/LB0 K4H511638B-ZC/LB0 K4H510838B-ZC/LB3 K4H510438B-ZC/LCC K4H511638B-ZC/LCC K4H510438B-ZC/LA2 K4H510838B-ZC/LA2 K4H511638B-ZC/LA2 K4H510838B-ZC/LB0 K4H510438B-ZC/LB3 K4H511638B-ZC/LB3 K4H510838B-ZC/LCC K4H510438B-GC/LA2 K4H510438B-GC/LB0 K4H510438B-GC/LB3 K4H510438B-GC/LCC K4H510838B-GC/LB3 K4H511638B-GC/LCC K4H510838B-GC/LCC K4H510838B-GC/LB0 K4H511638B-GC/LB0 K4H510838B-GC/LA2 K4H511638B-GC/LA2 K4H511638B-GC/LB3
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| OCR Text |
...A3
Organization 128Mx4 64Mx8 32mx16
Row Address A0~A12 A0~A12 A0~A12
Column Address A0-A9, A11, A12 A0-A9, A11 A0-A9
DM is internally loaded to match DQ and DQS identically. Row & Column address configuration
Rev. 1.3 June. 2... |
| Description |
512Mb B-die DDR SDRAM Specification 512MB的乙芯片DDR SDRAM内存规格
COVER, SIDE ENTRY, 20WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:20; Ways, No. of:20 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格
CONN MEMORY CARD HDR CF NORMAL 512MB的乙芯片DDR SDRAM内存规格
CN 68PIN (PC CARD) 512MB的乙芯片DDR SDRAM内存规格
COVER, SIDE ENTRY, 56WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:56; Ways, No. of:56 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格
COVER, TOP ENTRY, 90WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:90; Ways, No. of:90 RoHS Compliant: Yes
DIODE ZENER SINGLE 500mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-123 3K/REEL
DIODE ZENER SINGLE 150mW 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 150mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-523 3K/REEL
DIODE ZENER SINGLE 200mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-323 3K/REEL
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| File Size |
385.68K /
24 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4H510438D-UC/LA2 K4H510438D-UC/LB0
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| OCR Text |
...11, a12 64mx8 a0~a12 a0-a9, a11 32mx16 a0~a12 a0-a9 4.0 pin description 512mb tsop-ii package pinout v dd 1 66pin tsop ii (400mil x 875mil) dq 0 2 v ddq 3 nc 4 dq 1 5 v ssq 6 nc 7 dq 2 8 v ddq 9 nc 10 dq 3 11 v ssq 12 ba 0 20 cs 19 ras 18 ... |
| Description |
512Mb D-die DDR SDRAM Specification
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| File Size |
366.40K /
24 Page |
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it Online |
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Samsung Electronic
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| Part No. |
M463S3254CK1
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| OCR Text |
...32mx64 sdram m sodimm based on 32mx16, 4banks, 8k refresh, 3.3v synchronous drams with spd pin names * these pins are not used in this module. ** these pins should be nc in the system which does not support spd. pin name functi... |
| Description |
32Mx64 SDRAM mSODIMM based on 32mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
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| File Size |
165.62K /
13 Page |
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Samsung Electronic
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| Part No. |
M464S6554MTS
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| OCR Text |
32mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
The Samsung M464S6554MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S6554MTS consists of eight CMOS 32M x 16 bit w... |
| Description |
64Mx64 SDRAM SODIMM based on 32mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
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| File Size |
148.47K /
9 Page |
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it Online |
Download Datasheet |
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