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  360v Datasheet PDF File

For 360v Found Datasheets File :: 878    Search Time::7.265ms    
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    IRG4IBC20KD IRG4IBC20KDPBF

ANALOGICTECH[Advanced Analogic Technologies]
IRF[International Rectifier]
Part No. IRG4IBC20KD IRG4IBC20KDPBF
OCR Text ... See Fig. 9,10,14 -- -- s VCC = 360v, TJ = 125C VGE = 15V, RG = 50 , VCPK < 500V 51 -- TJ = 150C, See Fig. 10,11,14 37 -- IC = 9.0A, VCC = 480V ns 220 -- VGE = 15V, RG = 50 160 -- Energy losses include "tail" 0.85 -- mJ and diode reverse re...
Description 600V UltraFast 8-25 kHz Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 197.64K  /  10 Page

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    CT35SM-8

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
Part No. CT35SM-8
OCR Text ... VGE = 28V MAXIMUM CONDITION 360v 200A 1000F Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE

File Size 33.67K  /  2 Page

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    INTERSIL[Intersil Corporation]
Part No. HGT1S3N60B3DS HGTP3N60B3D FN4414
OCR Text ...ction temperature. 2. VCE(PK) = 360v, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC MIN 600 4.5 1...
Description 7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system

File Size 153.27K  /  7 Page

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    INTERSIL[Intersil Corporation]
Part No. HGT1S3N60C3DS HGTP3N60C3D FN4140
OCR Text ...ction temperature. 2. VCE(PK) = 360v, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = B...
Description 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
From old datasheet system

File Size 272.82K  /  7 Page

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    INTERSIL[Intersil Corporation]
Part No. HGTP3N60B3 HGT1S3N60B3S HGTD3N60B3S FN4368
OCR Text ...ction temperature. 2. VCE(PK) = 360v, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25o...
Description 7A/ 600V/ UFS Series N-Channel IGBTs
7A, 600V, UFS Series N-Channel IGBTs
From old datasheet system

File Size 140.49K  /  7 Page

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    INTERSIL[Intersil Corporation]
Part No. HGTP3N60C3 HGTD3N60C3S FN4139
OCR Text ...ction temperature. 2. VCE(PK) = 360v, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V IC = 3mA, VGE...
Description 6A/ 600V/ UFS Series N-Channel IGBTs
6A, 600V, UFS Series N-Channel IGBTs
From old datasheet system

File Size 242.35K  /  6 Page

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    HGTG15N120C3D

INTERSIL[Intersil Corporation]
Part No. HGTG15N120C3D
OCR Text ...ction temperature. 2. VCE(PK) = 360v, TJ = 125oC, RGE = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = ...
Description 35A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 100.95K  /  9 Page

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    HGTG20N60B3

Intersil Corporation
Part No. HGTG20N60B3
OCR Text ... junction temperature. 2. VCE = 360v, TC = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES IC = IC...
Description 40A, 600V, UFS Series N-Channel IGBTs

File Size 111.27K  /  6 Page

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    M57120L M57120

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M57120L M57120
OCR Text ... 30 Ta = 25C VIN = 113V 240V 360v OUTPUT VOLTAGE, Vo, (VOLTS) 21 3 20 RL = 10 RL = RL = 20 20 2 19 10 1 18 0 0 25 50 75 100 125 AMBIENT TEMPERATURE, Ta, (C) 0 0 0.05 0.10 0.15 0.20 LOAD CURRENT, IL,...
Description HIGH VOLTAGE INPUT dc-dc CONVERTER

File Size 62.25K  /  4 Page

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    HGTG40N60B3

Harris Corporation
Part No. HGTG40N60B3
OCR Text ...ction temperature. 2. VCE(PK) = 360v, TC = +125oC, RGE = 25. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1995 File Number ...
Description 70A, 600V, UFS Series N-Channel IGBT

File Size 49.63K  /  6 Page

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