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  4.7a Datasheet PDF File

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    APT5010LLC APT5010B2LC APT5010B2LC-06

Advanced Power Technolo...
Advanced Power Technology Ltd.
Part No. APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text 47A 0.100W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Low...
Description 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm

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    1.5SMC110CA 1.5SMC170CA 1.5SMC91CA 1.5SMC 1.5SMC100A 1.5SMC100CA 1.5SMC10A 1.5SMC10CA 1.5SMC110A 1.5SMC11A 1.5SMC11CA 1.

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WEITRON[Weitron Technology]
Part No. 1.5SMC110CA 1.5SMC170CA 1.5SMC91CA 1.5SMC 1.5SMC100A 1.5SMC100CA 1.5SMC10A 1.5SMC10CA 1.5SMC110A 1.5SMC11A 1.5SMC11CA 1.5SMC120A 1.5SMC120CA 1.5SMC12A 1.5SMC12CA 1.5SMC130A 1.5SMC130CA 1.5SMC13A 1.5SMC13CA 1.5SMC150A 1.5SMC150CA 1.5SMC15A 1.5SMC15CA 1.5SMC160A 1.5SMC160CA 1.5SMC16A 1.5SMC16CA 1.5SMC170A 1.5SMC180A 1.5SMC180CA 1.5SMC18A 1.5SMC18CA 1.5SMC200A 1.5SMC200CA 1.5SMC20A 1.5SMC20CA 1.5SMC220A 1.5SMC220CA 1.5SMC22A 1.5SMC22CA 1.5SMC24A 1.5SMC24CA 1.5SMC250A 1.5SMC250CA 1.5SMC27A 1.5SMC27CA 1.5SMC300A 1.5SMC300CA 1.5SMC30A 1.5SMC30CA 1.5SMC33A 1.5SMC33CA 1.5SMC350A 1.5SMC350CA 1.5SMC36A 1.5SMC36CA 1.5SMC39A 1.5SMC39CA 1.5SMC400A 1.5SMC400CA 1.5SMC43A 1.5SMC43CA 1.5SMC440A 1.5SMC440CA 1.5SMC47A 1.5SMC47CA 1.5SMC480A 1.5SMC480CA 1.5SMC510A 1.5SMC510CA 1.5SMC51A 1.5SMC51CA 1.5SMC530A 1.5SMC530CA 1.5SMC540A 1.5SMC540CA 1.5SMC550A 1.5SMC550CA 1.5SMC56A 1.5SMC56CA 1.5SMC6.8A 1.5SMC6.8CA 1.5SMC62A 1.5SMC62CA 1.5SMC68A 1.5SMC68CA 1.5SMC7.5A 1.5SMC7.5CA 1.5SMC75A 1.5SMC75CA 1.5SMC8.2CA 1.5SMC82A 1.5SMC82CA 1.5SMC9.1A 1.5SMC9.1CA 1.5SMC91A 1.5SMC8.2A
OCR Text ...22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 530A 540A 550A BI-POLAR 1.5SMC 1.5SMC 1.5SMC 1.5SMC 1.5SMC 1.5SMC 1.5SMC 1.5SMC 1.5SMC 1.5S...
Description 1500W Surface Mount Transient Voltage Suppressor

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text 47A 0.100 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text 47A 0.100 POWER MOS V (R) FREDFET T-MAXTM Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-res...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

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    MICROSEMI[Microsemi Corporation]
Part No. APT94N60L2C3
OCR Text ....90 0.80 NORMALIZED TO = 10V @ 47A V GS 200 180 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55C 160 140 120 100 80 60 40 20 0 TJ = +125C 0 1 2 3 4 5 6 VGS, GATE-TO-SOU...
Description Super Junction MOSFET

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    APT6010JFLL

Advanced Power Technology
Part No. APT6010JFLL
OCR Text 47A 0.100W POWER MOS 7TM FREDFET S G D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT5010B2LC APT5010LLC

ADPOW[Advanced Power Technology]
Part No. APT5010B2LC APT5010LLC
OCR Text 47A 0.100 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lo...
Description Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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    APT6010JLL

Advanced Power Technology
Part No. APT6010JLL
OCR Text 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.74K  /  2 Page

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    ZXM61N02 ZXM61N02F ZXM61N02FTA ZXM61N02FTC

Zetex Semiconductors
Part No. ZXM61N02 ZXM61N02F ZXM61N02FTA ZXM61N02FTC
OCR Text ....5V, I D=0.93A V GS=2.7V, I D=0.47A V DS=10V,I D=0.47A SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS. NOTES (1) Measured under pulsed conditions. Width300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction t...
Description N-channel MOSFET
20V N-CHANNEL ENHANCEMENT MODE MOSFET

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    ADPOW[Advanced Power Technology]
Part No. APT94N60L2C3
OCR Text ....90 0.80 NORMALIZED TO = 10V @ 47A V GS 200 180 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55C 160 140 120 100 80 60 40 20 0 TJ = +125C 0 1 2 3 4 5 6 VGS, GATE-TO-SOU...
Description Super Junction MOSFET

File Size 168.62K  /  5 Page

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