40.3a pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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40.3a Datasheet PDF File

For 40.3a Found Datasheets File :: 22404 Search Time::1.968ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2SC4559
OCR Text	...) Ratings 500 500 400 7 15 7 3 40 2.0 150 -55 to +150 Unit V V V V A A A W C C 7.50.2 16.70.3 3.10.1 14.00.5 s Absolute Maxi...3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = -...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.09K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCS821207 TPCS8212
OCR Text	...) 50 1 0 VGS = -1 V 40 VGS = 2 V 30 3 20 VGS = 2.5 V VGS = 4 V Common source Ta = 25C Pulse test 1 0 10 ...3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (N...
Description	Lithium Ion Battery Applications
File Size	184.85K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCS821107 TPCS8211
OCR Text	...) 50 1 0 VGS = -1 V 40 VGS = 2 V 30 3 20 VGS = 2.5 V VGS = 4 V Common source Ta = 25C Pulse test 1 0 10 ...3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (N...
Description	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
File Size	204.24K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCS820807 TPCS8208
OCR Text	...6 TPCS8208 RDS (ON) - Ta 40 35 Common source 10 IDR - VDS Drain-source ON resistance RDS (ON) (m) 25 VGS = 2 V 20 4 15 10 ID...3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (N...
Description	Lithium Ion Battery Applications
File Size	188.04K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCS820407 TPCS8204
OCR Text	...6 TPCS8204 RDS (ON) - Ta 40 35 Common source 10 IDR - VDS Drain-source ON resistance RDS (ON) (m) 25 VGS = 2 V 20 4 15 10 ID...3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (N...
Description	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
File Size	183.07K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCP840207 TPCP8402
OCR Text	...mm 0.330.05 0.05 M A 8 5 2.40.1 0.475 1 4 0.65 2.90.1 B A 0.05 M B 0.80.05 S 0.025 S 0.170.02 0.28 +0.1 -0.11...3a) dissipation (t = 5 s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Sing...
Description	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
File Size	299.20K / 11 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ527 2SJ527L 2SJ527S
OCR Text	... Power vs. Temperature Derating 40 Pch (W) I D (A) Maximum Safe Operation Area -100 -50 10 10 PW 30 -20 -10 -5 -2 -1 -0.5 0 s s Channel Dissipation Drain Current 20 D = 1 s m C 10 0 50 100 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.03K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCP8302
OCR Text	...mm 0.330.05 0.05 M A 8 5 2.40.1 0.475 1 4 0.65 2.90.1 B A 0.05 M B Absolute Maximum Ratings (Ta = 25C) Characteristic Dra...3a) 1. Source1 2. Gate1 3. Source2 4. Gate2 5. Drain2 6. Drain2 7. Drain1 8. Drain1 JEDEC J...
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS? TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
File Size	228.35K / 7 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ569LS
OCR Text	....2 1.0 0.8 0.6 0.4 0.2 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT01836 Case Temperature, Tc -- C IT01837 No.6898-2/4 2SJ569LS 10 yfs -- ID VDS= --10V 25 = -C Forward Current, ...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	29.35K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCP8301
OCR Text	...mm 0.330.05 0.05 M A 8 5 2.40.1 0.475 1 4 0.65 2.90.1 B A 0.05 M B 0.80.05 Absolute Maximum Ratings (Ta = 25C) Charact...3a) dissipation Single-device value at (t = 5 s) (Note 2a) dual operation (Note 3b) Single-device op...
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS? TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
File Size	289.49K / 7 Page	View it Online	Download Datasheet

For 40.3a Found Datasheets File :: 22404 Search Time::1.968ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |