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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...s 4 0 1 10 100 0 0 200 400 600 800 1000 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter ...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ... 0 1 10 100 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitanc...800 1000 1200 1400 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. ...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ... 5000 0 1 10 100 0 0 200 400 600 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capaci...800 1000 1200 1400 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V)...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    HBAT54C HBAT54S HBAT54A HBAT54

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelect...
Part No. HBAT54C HBAT54S HBAT54A HBAT54
OCR Text ... at IR=1mA Min. 30 Max. 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV uA pF nS Forward Voltage Reverse Current Total Capacitance...800 1000 Forward Current-IF (mA) 10 100 50 0 1 0.1 1 10 100 Forward Voltage-VF ...
Description Silicon Schottky Barrier Double Diodes

File Size 22.64K  /  3 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... tp 0 .0 1 + - VD D A 400 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... tp 0 .0 1 + - VD D A 400 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...-32 or M3 srew Max. 100 71 400 170 1.11 20 350 60 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ...800 TOP BOTTOM 600 1 5V ID 24A 42A 60A VD S L D R IV E R RG 20V D .U .T I...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... D .U .T IA S + V - DD 400 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( o C) Fig 12c. Maximum Avalanche Energy Vs. Drai...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ....U .T IA S + V - DD A 400 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 175 V (B R )D SS tp Starting T J , Junction Temperature (oC) Fig 12c. Maximum Avalanche Energy Vs. Drain Cu...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text ...est Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QG...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

File Size 237.30K  /  10 Page

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