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M27C516 TORX1 101K25Y 30210 WE9192U 100100 GBPC3506 00ETTT
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  41a Datasheet PDF File

For 41a Found Datasheets File :: 292    Search Time::0.797ms    
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    IRF1405PBF

International Rectifier
Part No. IRF1405PBF
OCR Text ...DS L DRIVER 1000 ID 41a 71A BOTTOM 101A TOP 800 RG 20V D.U.T IAS tp + V - DD A 600 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 400 200 0 25 Starting T , Junction Temperatu...
Description    AUTOMOTIVE MOSFET

File Size 201.40K  /  9 Page

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    APT50GP60B

Advanced Power Technology
Part No. APT50GP60B
OCR Text ...26A * 100 kHz operation @ 400V, 41a * SSOA rated G E C MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector ...
Description MOSFET
POWER MOS 7 IGBT

File Size 88.96K  /  6 Page

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    APT50GP60S

Advanced Power Technology
Part No. APT50GP60S
OCR Text ...26A * 100 kHz operation @ 400V, 41a * SSOA rated G E C MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector ...
Description MOSFET
POWER MOS 7 IGBT

File Size 95.63K  /  6 Page

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    MICROSEMI[Microsemi Corporation]
Part No. 1N4148UR-1_1 1N4148UR-1
OCR Text ...C to +200C -65C to +200C 2.0A 1.41a 500mW 200mA, TA= +25C Derating Factor: D.C. Reverse Voltage (VRWM): 1.14mA/C above TA= +25C 75V DC ELECTRICAL CHARACTERISTICS VF Ambient (C) IF mA Min Max Ambient V V (C) IR V (dc) Min A ...
Description SWITCHING DIODE

File Size 59.19K  /  1 Page

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    FUJI[Fuji Electric]
Part No. 2SK3645-01MR
OCR Text ...W] EAS [mJ] 30 300 IAS=41a 200 20 10 100 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 120 20V 100 10V 80 10 100 ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 90.63K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT41F100J
OCR Text 41a, 0.21 Max, trr 400ns N-Channel FREDFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase ...
Description N-Channel FREDFET

File Size 260.43K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT41H50S APT41H50B
OCR Text 41a, 0.15 Max, trr, 215ns N-Channel Ultrafast Recovery FREDFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for maximum re...
Description N-Channel Ultrafast Recovery FREDFET

File Size 253.58K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT41M80L APT41M80B2
OCR Text 41a, 0.24 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with lo...
Description N-Channel MOSFET

File Size 251.66K  /  4 Page

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    IRF1405LPBF IRF1405SPBF

International Rectifier
Part No. IRF1405LPBF IRF1405SPBF
OCR Text ...100 VDS L DRIVER ID 41a 71A BOTTOM 101A TOP RG 20V D.U.T IAS tp + - VDD A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 125 150 175 Starting TJ , Junction Temperature ( C) I AS F...
Description AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3mΩ , ID = 131A )
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3mヘ , ID = 131A )

File Size 233.70K  /  12 Page

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    IRG4PH40UDPBF

International Rectifier
Part No. IRG4PH40UDPBF
OCR Text ....1 IC = 21A VGE = 15V -- V IC = 41a See Fig. 2, 5 -- IC = 21A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 21A 250 A VGE = 0V, VCE = 600V 5000 VGE = 0V, VCE = 600V, TJ = 150C 3.3 V IC = 8.0A See Fig...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE

File Size 669.34K  /  11 Page

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