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Diodes Inc.
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Part No. |
DMN2004WK-7
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OCR Text |
...d drain current (note 3) i dm 1.5 a total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient r ja 625 c/w opera...7 0.55 0.70 0.9 v gs = 4.5v, i d = 540ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward... |
Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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File Size |
135.48K /
4 Page |
View
it Online |
Download Datasheet
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Diodes Inc.
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Part No. |
DMN2004DWK-7
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OCR Text |
...d drain current (note 3) i dm 1.5 a total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient r ja 625 c/w opera...7 0.55 0.70 0.9 v gs = 4.5v, i d = 540ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward... |
Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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File Size |
138.85K /
4 Page |
View
it Online |
Download Datasheet
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TY Semiconductor Co., Ltd
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Part No. |
DMN3112S-7 DMN3112SQ-7
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OCR Text |
...ct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view equivalent circuit d g s top view pin configuration mn4 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = sep... |
Description |
N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance
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File Size |
82.40K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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