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  8 512k Datasheet PDF File

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    K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E
OCR Text ... & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of ...512k x 16 Row Buffer DQi Address Register CLK ADD 512k x 16 Column Decoder Col. Bu...
Description 1M x 16 SDRAM

File Size 671.65K  /  42 Page

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    K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC80 K4S161622H K4S161622H-TC600

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC80 K4S161622H K4S161622H-TC600
OCR Text ...on 1.4 (May, 2004) - Added Note 8. sentense of tRDL parameter. CMOS SDRAM Revision 1.5 (August, 2004) - Modified CLK cycle time(tcc) p...512k x 16Bit x 2 Banks SDRAM FEATURES * * * * 3.3V power supply LVTTL compatible with multiplexed ...
Description 16Mb H-die SDRAM Specification

File Size 106.31K  /  11 Page

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    K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50 K4S643232H-TC55 K4S643232H-TC60 K4S643232H-TL50 K4S643232H-TL55 K4S643232H-TL60 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...512k x 32 Orgainization Max Freq. 143MHz(CL=3) 166MHz(CL=3) 183MHz(CL=3) 200MHz(CL=3) LVTTL 86pin TS...
Description 64Mb (512k x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512k x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512k x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
   64Mb H-die (x32) SDRAM Specification

File Size 115.81K  /  12 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1371D-133BGXCT
OCR Text ...hz unit maximum access time 6.5 8.5 ns maximum operating current 210 175 ma maximum cmos standby current 70 70 ma note: 1. for best-practic...512k x 36) logic block diagram ? cy7c1373d (1m x 18) c mode bw a bw b we ce1 ce2 ce3 oe read logic d...
Description 512k X 36 ZBT SRAM, 6.5 ns, PBGA119

File Size 864.64K  /  29 Page

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    AT25F1024 AT25F1024N-10SI-2.7 AT25F512 AT25F512N-10SI-2.7

Atmel Corp.
ATMEL[ATMEL Corporation]
Part No. AT25F1024 AT25F1024N-10SI-2.7 AT25F512 AT25F512N-10SI-2.7
OCR Text ...ce: 10,000 Write Cycles Typical 8-lead JEDEC SOIC * * * * * * * * * SPI Serial Memory 512k (65,536 x 8) 1M (131,072 x 8) Description The AT25F512/1024 provides 524,288/1,048,576 bits of serial reprogrammable Flash memory organize...
Description High Speed CMOS Logic Hex Buffers/Line Drivers with Inverting 3-State Outputs 16-PDIP -55 to 125
SPI Serial Memory

File Size 147.73K  /  17 Page

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    32C408BRT2FI-16 32C408BRPFS-18 32C408BRT4FB-16 32C408BRT4FB-18

MAXWELL TECHNOLOGIES
Part No. 32C408BRT2FI-16 32C408BRPFS-18 32C408BRT4FB-16 32C408BRT4FB-18
OCR Text ...w.maxwell.com 4 megabit (512k x 8-bit) sram 32c408b ?2001 maxwell technologies all rights reserved. 12.19.01 rev 6 1000559 f eatures : ? 512k x 8-bit cmos architecture ?r ad -p ak ? technology hardened agains t natural space radi- ation ? ...
Description 512k X 8 STANDARD SRAM, 30 ns, DFP36
512k X 8 STANDARD SRAM, 20 ns, DFP36

File Size 168.95K  /  9 Page

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    MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70PNS MBM29LV004TC-12PNS MBM29LV004TC-12PTN MBM29LV004TC-90PTR MBM29LV00

FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
Part No. MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70PNS MBM29LV004TC-12PNS MBM29LV004TC-12PTN MBM29LV004TC-90PTR MBM29LV004TC-70PTR MBM29LV004TC-90PTN MBM29LV004TC-12PTR MBM29LV004TC-70PTN MBM29LV004BC-70 MBM29LV004BC-12 MBM29LV004BC-12PNS MBM29LV004BC-12PTN MBM29LV004BC-12PTR MBM29LV004BC-70PNS MBM29LV004BC-70PTN MBM29LV004BC-70PTR MBM29LV004BC-90 MBM29LV004BC-90PNS MBM29LV004BC-90PTN MBM29LV004BC-90PTR
OCR Text 8) bit mbm29lv004tc -70/-90/-12 /mbm29lv004bc -70/-90/-12 n features ? single 3.0 v read, program, and erase minimizes system level power re...512k bytes of 8 bits each. the mbm29lv004tc/bc are offered in a 40-pin tsop(i) and 40-pin son packa...
Description 4M (512k X 8) BIT 512k X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512k X 8) BIT 512k X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512k X 8) BIT 512k X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512k X 8) BIT

File Size 278.54K  /  52 Page

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    LH28F004SU-Z1

SHARP[Sharp Electrionic Components]
Part No. LH28F004SU-Z1
OCR Text 8) Flash Memory TOP VIEW * 512k x 8 Word Configuration * 5 V Write/Erase Operation (5 V VPP) - No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7...
Description 4M (512k8) Flash Memory
4M (512k 8) Flash Memory

File Size 179.96K  /  32 Page

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    LH28F004SU-Z9

SHARP[Sharp Electrionic Components]
Part No. LH28F004SU-Z9
OCR Text 8) Flash Memory TOP VIEW * 512k x 8 Word Configuration * 2.7 V Write/Erase Operation (5 V 0.5 V VPP, 3.0 V 0.3 V VCC, +15C to +35C) - No Requirement For DC/DC Converter To Write/Erase 1 A GND B C D E F A17 A10 A14 A16 A15 2 D...
Description 4M (512 】 8) Flash Memory
4M (512 8) Flash Memory

File Size 185.42K  /  31 Page

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