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MBR640CT DS3154N ED10C5 ISL29000 MAX192A UD0E221X 00220 2N3053
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  980.00 Datasheet PDF File

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    NCP1215 NCP1215DR2 NCP1215DR2G NCP1215SNT1

ONSEMI[ON Semiconductor]
Part No. NCP1215 NCP1215DR2 NCP1215DR2G NCP1215SNT1
OCR Text ...ure 0.990 0.985 ICC-SW, (mA) 0.980 0.975 Voffset, (V) 1.20 1.18 1.16 1.14 1.12 1.10 1.08 1.06 1.04 1.02 0.960 -25 0 25 50 75 100 125 1.00 -25 Figure 4. VUVLO Threshold vs. Junction Temperature 0.970 0.965 0 25 50 75 10...
Description Low Cost Variable OFF Time Switched Mode Power Supply Controller

File Size 148.50K  /  16 Page

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    IRFP23N50L

International Rectifier, Corp.
Part No. IRFP23N50L
OCR Text .../s --- 560 840 nC TJ = 25C --- 980 1500 nC TJ = 125C --- 7.6 11 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) T...00 3.0 I D = 23A ID, Drain-to-Source Current ( ) 2.5 T J = 25C R DS(on) , Drain-to-...
Description Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)\u003d 0.190ohm,身份证\u003d 23A条)

File Size 102.63K  /  8 Page

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    LNA2901L

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. LNA2901L
OCR Text ...lative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) 30 960 60 60 50 40 40 50 60 70 80 90 940 40 30 20 20 920 900 - 40 0 40 80 120 0 860 900 940 980 1020 ...
Description GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm

File Size 39.49K  /  2 Page

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    MANC3110 MANC3410 MANC3940 MANC3140 MANC3440 MANC3910

FAIRCHILD[Fairchild Semiconductor]
Part No. MANC3110 MANC3410 MANC3940 MANC3140 MANC3440 MANC3910
OCR Text ...= 20mA 860 6800 MAN3G10 MAN3G40 980 5390 MAN3R10 MAN3R40 ucd ucd IF = 5mA IF = 20mA MANC3110 MANC3140 MANC3410 MANC3440 MANC3910 MANC3940 Units Test Condition Peak Wavelength Dominant Wavelength Spectral Line 1/2 Width Reverse B(3).Volta...
Description 7.6mm (0.3 inch) COMPACT NUMERIC FRAME DISPLAY
7.6mm 0.3 inch COMPACT NUMERIC FRAME DISPLAY

File Size 927.96K  /  7 Page

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    SSH70N10 SSH70N10A

FAIRCHILD[Fairchild Semiconductor]
Part No. SSH70N10 SSH70N10A
OCR Text ...66 --4.0 100 -100 10 100 0.023 -980 430 60 60 240 180 195 --nC ns A pF V V/ C V nA Test Condition VGS=0V,ID=250 A ID=250 A See Fig 7 ...00 .3 VGS = 10 V Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current 12 0...
Description Advanced Power MOSFET

File Size 260.61K  /  7 Page

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    SSS70N10 SSS70N10A

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. SSS70N10 SSS70N10A
OCR Text ...66 --4.0 100 -100 10 100 0.023 -980 430 60 60 240 180 195 --nC ns A pF V V/ C V nA Test Condition VGS=0V,ID=250 A ID=250 A See Fig 7 ...00 .3 VGS = 10 V Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current 12 0...
Description Advanced Power MOSFET

File Size 367.18K  /  7 Page

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    LN59-LNA2702L LNA2702L LN59

Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
Part No. LN59-LNA2702L LNA2702L LN59
OCR Text ...lative radiant intensity (%) 980 80 920 20 60 80 900 - 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2
Description GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm

File Size 46.33K  /  2 Page

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    LNA2601L

PANASONIC[Panasonic Semiconductor]
Part No. LNA2601L
OCR Text ...lative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) P (nm) 30 Peak emission wavelength 960 60 60 50 40 40 50 60 70 80 90 940 40 30 20 20 920 900 - 40 0 40 80 120 ...
Description GaAs Infrared Light Emitting Diode

File Size 40.32K  /  2 Page

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    NE334S01 NE334S01-T1 NE334S01-T1B

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NE334S01 NE334S01-T1 NE334S01-T1B
OCR Text ... 20.889 19.984 19.642 20.331 20.980 21.543 21.748 20.156 19.965 21.257 20.523 21.974 22.748 25.818 27.860 2.47 1.94 1.87 1.56 1.33 1.18 1...00 3.15 3.30 3.62 3.92 4.49 4.78 6 NE334S01 Noise Parameters <TYPICAL CONSTANT NOISE FIGURE C...
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C波段超低噪声放大器N沟道黄建忠场效应

File Size 72.14K  /  12 Page

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    AD641 AD641A AD641AN AD641AP AD641-EB AD641S 5962-9559801MRA AD641P AD641Q D641AP-REEL7

Analog Devices, Inc.
AD[Analog Devices]
ANALOG DEVICES INC
Part No. AD641 AD641A AD641AN AD641AP AD641-EB AD641S 5962-9559801MRA AD641P AD641Q D641AP-REEL7
OCR Text ...T - mA 1 0.995 0.990 0.985 0.980 -60 -40 -20 INTERCEPT - mV 1.005 0 20 40 60 80 100 120 140 TEMPERATURE - C 0 20 40 60 80 100...00 -1.75 OUTPUT CURRENT - mA -2.00 -1.75 +125 C -1.50 -1.25 +25 C -55 C +25 C +125 C 5 4 3 2 ...
Description    250 MHz Demodulating Logarithmic Amplifier
Amplifier. Other
250 MHz, 44 dB Demodulating Logarithmic Amplifier
LOG OR ANTILOG AMPLIFIER, 250 MHz BAND WIDTH, PQCC20

File Size 256.45K  /  16 Page

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