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				Power Innovations International, Inc. Bourns, Inc. Power Innovations Limited POINN[Power Innovations Ltd]
Part No.	TISP4260F3 TISP4290F3 TISP4240F3 TISP4380F3 TISP4320F3 TISP4320F3DR-S TISP4260F3D TISP4260F3DR TISP4260F3SL
OCR Text	... until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides. These monolithic protection devices are fabricated in ion-implanted plan...
Description	SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS TISP Thyristor Overvoltage Protectors 320 V, 4 A, SILICON SURGE PROTECTOR Single Symmetrical Overvoltage TISP for 2 Wire Systems
File Size	335.29K / 13 Page	View it Online	Download Datasheet

				Mitsubishi
Part No.	BCR3PM
OCR Text	... 102 7 5 3 2 101 7 5 3 2 100 breakover VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) DISTRIBUTION ...
Description	TRIAC,600V V(DRM),3A I(T)RMS,TO-202AB
File Size	128.20K / 11 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR6AM BCR6
OCR Text	... 3 2 102 7 5 3 2 101 7 5 3 2 breakover VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) DISTRIBUTION ...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	80.34K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR12CM BCR12
OCR Text	... 3 2 102 7 5 3 2 101 7 5 3 2 breakover VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) 100 -40 T2 ,...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE MITSUBISHISEMICONDUCTOR(TRIAC)MEDIUMPOWERUSENON-INSULATEDTYPE.PLANARPASSIVA..
File Size	80.80K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR8CM BCR8
OCR Text	... 3 2 102 7 5 3 2 101 7 5 3 2 breakover VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) 100 -40 T2 , G TYPICAL - T2 , G- E...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE MITSUBISHISEMICONDUCTOR(TRIAC)MEDIUMPOWERUSENON-INSULATEDTYPE.PLANARPASSIVA..
File Size	81.41K / 5 Page	View it Online	Download Datasheet

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