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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM51X17400F-10TS-K
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| OCR Text |
...ipation family t rac t aa t cac t oea cycle time (min.) operating (max.) standby (max.) msm51x17400f-10 100ns 50ns 20ns 20ns 200ns 200mw 1.1mw
fedd51x17400f-03 1 semiconductor msm51x17400f 2/13 pin configura... |
| Description |
4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304词位动态随机存储器：快速页面模式型
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| File Size |
144.74K /
13 Page |
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Air Cost Control
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| Part No. |
IC41SV44054-100T
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| OCR Text |
...) 70 100 ns cas access time (t cac )2025ns column address access time (t aa )3550ns fast page mode cycle time (t pc )4560ns read/write cycle time (t rc ) 130 180 ns icsi reserves the right to make changes to its products at any time withou... |
| Description |
4Mx4 bit Dynamic RAM with Fast Page Mode 4Mx4位动态RAM的快速页面模
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| File Size |
239.62K /
17 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STLC3055N
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| OCR Text |
... det rttx cac iltf rd iref rlim rth csvr cvcc vpos bgnd tip ring vbat agnd tx rx zac1 zac rs zb cttx1 cttx2 fttx ckttx supervision ttx proc ac proc reference stage line driver crev input logic and decod... |
| Description |
WLL & ISDN-TA SUBSCRIBER LINE INTERFACE CIRCUIT
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| File Size |
318.10K /
25 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM372V400CK
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| OCR Text |
... ns 3,4 access time from cas t cac 18 20 ns 3,4,5,11 access time from column address t aa 30 35 ns 3,10,11 cas to output in low-z t clz 5 5 ns 3,11 output buffer turn-off delay t off 5 18 5 20 ns 6,11 transition time(rise and fall) t t 2 ... |
| Description |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V 4米72的DRAM内存ECC的使Mx4KK刷新.3
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| File Size |
412.16K /
19 Page |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS41LV16257B-35K IS41LV16257B-35T
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| OCR Text |
...560ns max. cas access time (t cac )1115ns max. column address access time (t aa )1830ns min. fast page mode cycle time (t pc )1425ns min. read/write cycle time (t rc ) 60 110 ns 256k x 16 (4-mbit) dynamic ram with fast page mode
is41lv1... |
| Description |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
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| File Size |
193.07K /
20 Page |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM5364005BSW
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| OCR Text |
...performance range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - 35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 column ... |
| Description |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块）
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| File Size |
375.73K /
19 Page |
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Samsung semiconductor
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| Part No. |
KMM372C804BS
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| OCR Text |
... ns 3,4 access time from cas t cac 18 20 ns 3,4,5,11 access time from column address t aa 30 35 ns 3,10,11 cas to output in low-z t clz 5 5 ns 3,11 output buffer turn-off delay t off 5 18 5 20 ns 6,11 transition time(rise and fall) t t 1 ... |
| Description |
8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
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| File Size |
447.14K /
19 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1680BS KMM372C213CK KMM372C213CS
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| OCR Text |
... ns 3,4 access time from cas t cac 18 20 ns 3,4,5,11 access time from column address t aa 30 35 ns 3,10,11 cas to output in low-z t clz 5 5 ns 3,11 output buffer turn-off delay t off 5 18 5 20 ns 6,11 transition time(rise and fall) t t 2... |
| Description |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
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| File Size |
431.59K /
19 Page |
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it Online |
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CHUNGHWA PICTURE TUBES
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| Part No. |
CLAA070JA05CW
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| OCR Text |
...idc - av dd /2 - v note1 v cac 4 4.88 6 v p-p note1,2 vcom v cdc 1.85 1.95 2.05 v note1,3 v ih 0.7v cc - vcc v input signal voltage v il 0 - 0.3v cc v note4 note1 please refer to fig.1 note2 brightness level is a... |
| Description |
Display Module
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| File Size |
716.88K /
15 Page |
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it Online |
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Alliance Semiconductor
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| Part No. |
AS4C4M4E1
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| OCR Text |
...0 ns maximum cas access time t cac 12 15 ns maximum output enable (oe ) access time t oea 13 15 ns minimum read or write cycle time t rc 85 100 ns minimum fast page mode cycle time t pc 25 30 ns maximum operating current i cc1 135 120 ma m... |
| Description |
4M x 4 CMOS DRAM
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| File Size |
276.86K /
14 Page |
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it Online |
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