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  case 29--1 style 14 to-2 to26a Datasheet PDF File

For case 29--1 style 14 to-2 to26a Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    BC559B BC560C ON0153 BC559C BC559BZL1

ONSEMI[ON Semiconductor]
Part No. BC559B BC560C ON0153 BC559C BC559BZL1
Description Low Noise Transistor PNP
Low Noise Transistors
case 29-04, style 17 to-2 (to-226AA)
From old datasheet system

File Size 81.88K  /  4 Page

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    X40020V14I-C X40020V14I-B X40020V14I-A

Intersil Corporation
Part No. X40020V14I-C X40020V14I-B X40020V14I-A
Description DIODE, STANDARD, 95A, 400V, STUD; Voltage, Vrrm:400V; Current, If av:95A; case style:E12; Current, Ifs max:700A; Diode type:Standard recovery; Polarity, diode:Stud Anode; Thread size:M8; Voltage, forward at If:1.5V RoHS Compliant: Yes
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):50A; Non Repetitive Forward Surge Current Max, Ifsm:700A; Forward Voltage Max, VF:1.6V; Package/case:SO-32B
DIODE, STUD 50A 1200VDIODE, STUD 50A 1200V; Voltage, Vrrm:1200V; Current, If av:50A; Current, Ifs max:700A; Voltage, forward at If:1.6V; case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Anode

File Size 339.46K  /  24 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. MS1007
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; case style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR

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    Microsemi, Corp.
Part No. 2731-20
Description S-Band 2700-3100 MHz; P(out) (W): 20; P(in) (W): 3; Gain (dB): 8.2; Vcc (V): 36; Pulse Width (&#181;sec): 100; Duty Cycle (%): 10; case style: 55CR S BAND, Si, NPN, RF POWER TRANSISTOR

File Size 59.19K  /  3 Page

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    BS170 BS170_D ON0218

Motorola, Inc.
Motorola Inc
ON Semi
MOTOROLA[Motorola, Inc]
Part No. BS170 BS170_D ON0218
Description Regulated Output Power; 1.6kVDC Isolation; ULCertified; Low Profile, 10.2 mm Height; Over Current Protection; Five-Sided Shield; Standard DIP24
TMOS FET Switching(N-Channel-Enhancement)
case 29-4, style 30 to-2 (to-26AA)
From old datasheet system

File Size 76.23K  /  4 Page

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    Microsemi, Corp.
Part No. SD1536-03
Description Air DME 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 90; P(in) (W): 13; Gain (dB): 8.4; Vcc (V): 50; Pulse Width (&#181;sec): 10; Duty Cycle (%): 1; case style: M115 L BAND, Si, NPN, RF POWER TRANSISTOR

File Size 58.53K  /  1 Page

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    AM1601-7R BM1601-7R CM1601-7R DM1601-7R FM1601-7R AM1301-7R BM1301-7R CM1301-7R DM1301-7R FM1301-7R AM3020-7 DM1001-7R A

POWER-ONE INC
Glenair, Inc.
Rectron Semiconductor
Power-One, Inc.
POWER-ONE[Power-One]
http://
Part No. AM1601-7R BM1601-7R CM1601-7R DM1601-7R FM1601-7R AM1301-7R BM1301-7R CM1301-7R DM1301-7R FM1301-7R AM3020-7 DM1001-7R AM3040-7 DM3040-7 FM3040-7 DM3020-7 FM3020-7 DM1901-7R FM1901-7R FM2320-7 AM2320-7 CM1901-7R LM3040-7 AM1001-7R AM1501-7R AM1901-7R AM2540-7 BM1001-7R BM1501-7R BM1901-7R BM2320-7 BM2540-7 BM3020-7 BM3040-7 CM1001-7R CM1501-7R CM2320-7 CM2540-7 CM3020-7 CM3040-7 DM1501-7R FM1001-7R FM1501-7R FM2540-7 LM1001-7R LM1301-7R LM1501-7R LM1901-7R LM2320-7 LM2540-7 LM3020-7 DM2540-7 DM2320-7 CMZ1901-7ERD5H CMZ1901-7EPD5H CMZ3020-9EPD0 AM3040-7PD4F CM3040-7PD4F BM3040-9PD4F AM1001-7RD4AF CMZ1901-7EPD0AF POWER-ONEINC-AM1001-7RD0A BM10.1-7R AM1301-9PD0H
Description 50 Watt DC-DC Converters 50瓦的DC - DC转换
3-OUTPUT 50 W DC-DC REG PWR SUPPLY MODULE METAL, case M02, MODULE
1-OUTPUT 50 W DC-DC REG PWR SUPPLY MODULE METAL, case M02, MODULE
Contact Gender:Pin; Circular Shell style:Box Mount Receptacle; Insert Arrangement:21-16 RoHS Compliant: No
LJT 26C 26#20 PIN WALL RECP
   50 Watt DC-DC Converters

File Size 144.63K  /  4 Page

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    Advanced Power Technolo...
Microsemi, Corp.
Part No. MS1329
Description RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; case style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR

File Size 190.23K  /  3 Page

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    New Jersey Semiconductor
Part No. 30KPA54A 30KPA84A 30KPA84C 30KPA132CA 30KPA43 30KPA30 30KPA320A 30KPA400 30KPA30CA 30KPA42CA 30KPA51 30KPA51CA 30KPA58 30KPA60CA 30KPA60A 30KPA288 30KPA288A 30KPA144A 30KPA72C 30KPA72CA 30KPA198CA 30KPA71 30KPA71A 30KPA66C 30KPA66CA 30KPA66A 30KPA108 30KPA108A 30KPA108C 30KPA108CA 30KPA102 30KPA102C 30KPA102CA 30KPA102A 30KPA130 30KPA132A 30KPA78 30KPA78A 30KPA78C 30KPA78CA 30KPA64C 30KPA64CA
Description Diode TVS Single Uni-Dir 54V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 84V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 84V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 132V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 43V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 30V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 320V 30KW 2-Pin
Diode TVS Single Uni-Dir 400V 30KW 2-Pin case P-600
Diode TVS Single Bi-Dir 30V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 42V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 51V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 51V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 58V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 60V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 60V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 288V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 144V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 72V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 198V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 72V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 71V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 66V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 66V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 108V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 108V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 102V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 102V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 132V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 78V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 78V 30KW 2-Pin case P600 T/R
Diode TVS Single Uni-Dir 198V 30KW 2-Pin case P600 T/R
Diode TVS Single Bi-Dir 64V 30KW 2-Pin case P600 T/R

File Size 148.38K  /  3 Page

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    Golledge Electronics, Ltd.
STMicroelectronics N.V.
Part No. BC213A BC214B BC214A BC213C BC158B BC158A BC147B BC157B BC149C BC157A BC147A BC159B
Description Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:102; Package/case:144-TQFP; Number of Circuits:1728; Mounting Type:surface mount
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:147; Package/case:208-PQFP; Leaded Process Compatible:No; Number of Circuits:1728
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:176; Package/case:256-FBGA; Leaded Process Compatible:No; Number of Circuits:1728
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:102; Package/case:144-TQFP; Leaded Process Compatible:No; Number of Circuits:576
; Temperature, operating range:-40(degree C) to (degree C); Base number:16; IC Generic RoHS Compliant: Yes
; Temperature, operating range:-40(degree C) to (degree C); Base number:1; IC Generic RoHS Compliant: Yes
FPGA, FLEX 10K, 10K GATES, PQFP208; Logic IC family:FPGA; Logic IC Base Number:10; Logic IC function:EPF10K10; Voltage, supply:5.0V; case style:PQFP
MAX 3000A CPLD 128 MC 100-TQFP
MAX 7000 CPLD 128 MC 100-PQFP
Stratix II GX FPGA 60K FPGA-780 晶体管|晶体管|进步党| 20V的五(巴西)总裁| 100mA的我(丙
Stratix II FPGA 60K FBGA-672 晶体管|晶体管|叩| 45V的五(巴西)总裁| 100mA的我(丙
SERIAL CONFIG MEMORY, 16M, SOIC16; Memory type:FLASH; Memory size:16MB; Temp, op. min:-40(degree C); Temp, op. max:85(degree C); case style:SOIC; Temperature, operating range:-40(degree C) to (degree C); Base number:16; IC Generic RoHS Compliant: Yes

File Size 305.61K  /  3 Page

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For case 29--1 style 14 to-2 to26a Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

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