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For gate-commutated Found Datasheets File :: 737 Search Time::1.968ms
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				List of Unclassifed Manufac... List of Unclassifed Manufacturers Spansion, Inc. Littelfuse, Inc. LITTELFUSE[Littelfuse] List of Unclassifed Man...
Part No.	SK025N SK010D S2006F1 S8040N SK055M SK055N S4025L S4025N S4025R SK055R S6065J S6065K S8040R S8035J S8035K S2N1 S2006D S2006L S2006V S2008D S2008F1 S2008L S2008R S2008V S2010D S2010F1 S2010L S2010R S2010V S2012D S2012R S2012V S2015L S2016N S2016R S201E S2020L S2025L S2025N S2025R S2035J S2035K S2040N S2040R S2055M S2055N S2055R S2055W S2065J S2065K S2070W S4006D S4006F1 S4006L S4006V S4008D S4008F1 S4008L S4008R S4008V S4010D S4010F1 S4010L S4010R S4010V S4012D S4012R S4012V S4015L S4016N S4016R S401E S4020L S4035J S4035K S4040N S4040R S4055M S4055N S4055R S4055W S4065J S4065K S4070W S4N1 S6006D S6006F1 S6006L S6006V S6008D S6008F1 S6008L S6008R S6008V S6010D S6010F1 S6010R S6010V S6012D S6012R S6012V S6015L S6016N S6016R S601E S6020L S6025L S6025N S6025R S6035J S6035K S6040N S6040R S6055M S6055N S6055R S6055W S6070W S6N1 S8006D S8006L S8006V S8008D S8008L S8008R S8008V S8010D S8010L S8010R S8010V S8012D S8012R S8012V S8015L S8016N S8016R S8020L S8025L S8025N S8025R S8055M S8055N S8055R S8055W S8065J S8065K S8070W SK006D SK006L SK006V SK008D SK008L SK008R SK008V SK010L SK010R SK010V SK012D SK012R SK012V SK015L SK016N SK016R SK020L SK025L SK025R SK035K SK040N SK040R SK065K S-2025L S6
OCR Text	... are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with rati...commutated turn-off time VDRM and VRRM -- Repetitive peak off-state forward and reverse voltage V...
Description	RoHS Compliant, Electrically-isolated package 35 A, 1000 V, SCR, TO-218 10 A, 600 V, SCR, TO-252 SCRs (1 A to 70 A) 可控硅（1 A0甲） SCRs (1 A to 70 A) 可控硅（1 A70甲） FERRITE BEAD 2000 OHM 1812 :Straight Plug; Insert Arrangement:16-8 INDUCTOR 22UH 20% 1007 SMD Temperature Range (degrees C): -30 to 85; General Description: In-line adapter; Both ends male contacts; Pin contact
File Size	209.58K / 12 Page	View it Online	Download Datasheet

				UTC[Unisonic Technologies]
Part No.	BT169 UTCBT169
OCR Text	gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are inten...commutated turn-off time ID,IR dVD/dt 25 V/s tgt tq 2 100 s s UTC UNISONI...
Description	SCR
File Size	35.24K / 4 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5437 NTE5438
OCR Text	...high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Repetitive Pe...Commutated Turn-Off Time Symbol VT VT(TO) rT IGT VGT IH IL dv/dt di/dt tgd tq Test Conditions IT = 1...
Description	Silicon Controlled Rectifier (SCR) 8 Amp
File Size	20.14K / 2 Page	View it Online	Download Datasheet

				POSEICO[Power Semiconductors] POSEICO SPA
Part No.	AT704S16 AT704
OCR Text	...rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 72...
Description	PHASE CONTROL THYRISTOR MS/STANDARD CYLINDRICAL MIL-C-5015 SERIES 3102R LIGHTWEIGHT ENVIRONMENTAL RESISTING BOX MOUNT RECEPTACLES, STRAIGHT BODY STYLE, SOLDER TERMINATION, 18 SHELL SIZE, 18-1 INSERT ARRANGEMENT, RECEPTACLE GENDER, 10 CONTACTS PHASE CONTROL THYRISTOR 相位控制晶闸
File Size	42.97K / 4 Page	View it Online	Download Datasheet

				POSEICO[Power Semiconductors]
Part No.	AT1228S32 AT1228
OCR Text	...rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 13...
Description	PHASE CONTROL THYRISTOR
File Size	42.79K / 4 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semi
Part No.	MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1
OCR Text	...hannel Enhancement Mode Silicon Gate TMOS E-FETt SOT-223 for Surface Mount This advanced E-FET is a TMOS medium power MOSFET designed to wi...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description	1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
File Size	176.21K / 10 Page	View it Online	Download Datasheet

				POSEICO SPA POSEICO[Power Semiconductors]
Part No.	AT405 AT405S12
OCR Text	...rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 30...
Description	PHASE CONTROL THYRISTOR ER 47C 24#16 22#12 1#8 SKT REC 相位控制晶闸 ER 47C 24#16 22#12 1#8 PIN
File Size	167.13K / 4 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5446 NTE5448 NTE5442 NTE5444
OCR Text	... . . . . . . . . . 25A2sec Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...Commutated Turn-Off Time Critical Rate-of-Rise of Off-State Voltage ITM = 5A, IGT = 20mA, VD = Rated...
Description	Silicon Controlled Rectifier (SCR) 8 Amp
File Size	21.33K / 2 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMFT3055E_D ON2223 MMFT3055E-D
OCR Text	...hannel Enhancement Mode Silicon Gate TMOS E-FETt SOT-223 for Surface Mount This advanced E-FET is a TMOS Medium Power MOSFET designed to wi...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description	Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount From old datasheet system N-hannel Enhancement-ode Logic Level SOT23
File Size	202.50K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor Motorola, Inc.
Part No.	MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D
OCR Text	...hannel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and s...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS From old datasheet system
File Size	251.59K / 8 Page	View it Online	Download Datasheet

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