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  i2t Datasheet PDF File

For i2t Found Datasheets File :: 6340    Search Time::1.875ms    
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    A5N1000.30H A5N1000.32H

AEGIS SEMICONDUTORES LTDA
Part No. A5N1000.30H A5N1000.32H
OCR Text ...00 74 1600 14000 A 15000 937000 i2t Max. i2t capability 973000 i2t1/2 Max. i2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negati...
Description Phase Control Thyristors

File Size 329.37K  /  4 Page

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    A5N300.20H

AEGIS SEMICONDUTORES LTDA
Part No. A5N300.20H
OCR Text ...rrent 4.94 kA 5.23 5.70 109 119 i2t Max. i2t capability 125 136 i2t1/2 Max. i2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negat...
Description Phase Control Thyristors

File Size 492.22K  /  4 Page

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    VUO120 VUO120-12NO1 VUO120-16NO1 VUO155 VUO155-12NO1 VUO155-16NO1 L349 VUO155-12NO7 VUO155-16NO7

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IXYS[IXYS Corporation]
IXYS, Corp.
Part No. VUO120 VUO120-12NO1 VUO120-16NO1 VUO155 VUO155-12NO1 VUO155-16NO1 L349 VUO155-12NO7 VUO155-16NO7
OCR Text ...0/O10 Symbol VRRM IdAVM IFSM i2t Ptot TVJ TVJM Tstg VISOL Md dS dA a Weight Symbol Test Conditions Maximum Ratings VUO 120 1200/1600 VUO155 1200/1600 V Features TC = 75C, sinusoidal 120 TVJ = 45C, TVJ = 150C, TVJ = 45C, TV...
Description    Three Phase Rectifier Bridge
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
Three Phase Rectifier Bridge 3 PHASE, 121 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 157 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 121 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 157 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE

File Size 57.06K  /  3 Page

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    A5N600.20H

AEGIS SEMICONDUTORES LTDA
Part No. A5N600.20H
OCR Text ...rent 9.9 kA 10.37 11.30 428 466 i2t Max. i2t capability 488 532 i2t1/2 Max. i2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negat...
Description Phase Control Thyristors

File Size 609.57K  /  4 Page

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    A5N850.20H

AEGIS SEMICONDUTORES LTDA
Part No. A5N850.20H
OCR Text ... 16.13 kA 16.88 18.40 1138 1240 i2t Max. i2t capability 1298 1415 i2t1/2 Max. i2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak neg...
Description Phase Control Thyristors

File Size 638.71K  /  4 Page

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    DCR1675SA DCR1675SA48 DCR1675SA49 DCR1675SA50 DCR1675SA51 DCR1675SA52

Dynex Semiconductor
Part No. DCR1675SA DCR1675SA48 DCR1675SA49 DCR1675SA50 DCR1675SA51 DCR1675SA52
OCR Text ...A SURGE RATINGS Symbol ITSM i2t ITSM i2t Parameter Surge (non-repetitive) on-state current i2t for fusing Surge (non-repetitive) on-state current i2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half...
Description Phase Control Thyristor

File Size 86.45K  /  8 Page

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    MP03HBP360-08 MP03HBP360-10 MP03HBP360-12 MP03XXX360 MP03HBN360-08 MP03HBN360-10 MP03HBN360-12 MP03HBT360-12

Dynex Semiconductor
Part No. MP03HBP360-08 MP03HBP360-10 MP03HBP360-12 MP03XXX360 MP03HBN360-08 MP03HBN360-10 MP03HBN360-12 MP03HBT360-12
OCR Text ...e = 75C Tcase = 85C IT(RMS ITSM i2t ITSM i2t Visol RMS value Surge (non-repetitive) on-current i2t for fusing Surge (non-repetitive) on-current i2t for fusing Isolation voltage Tcase = 75C 10ms half sine, Tj = 130C VR = 0 10ms half sine, Tj...
Description    Dual Thyristor, Thyristor/Diode Module

File Size 117.57K  /  8 Page

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    A1N16.02J A1N16.04J

AEGIS SEMICONDUTORES LTDA
Part No. A1N16.02J A1N16.04J
OCR Text ...rent 0.31 A 0.33 0.36 0.34 0.37 i2t Max. i2t capability 0.48 0.52 i2t1/2 Max. i2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak neg...
Description Phase Control Thyristors

File Size 547.49K  /  4 Page

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    NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE6047 NTE6046
OCR Text .... . . . . 1151A Fusing Current, i2t 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6050A2s 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Silicon Power Rectifier Diode, 85 Amp

File Size 22.98K  /  2 Page

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    MP02TT800 MP02TT800-13 MP02TT800-14 MP02TT800-15 MP02TT800-16 MP02TT800-12

DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Part No. MP02TT800 MP02TT800-13 MP02TT800-14 MP02TT800-15 MP02TT800-16 MP02TT800-12
OCR Text ...50% duty cycle 4.5 Ltr/min ITSM i2t ITSM i2t Visol Surge (non-repetitive) on-current i2t for fusing Surge (non-repetitive) on-current i2t for fusing Isolation voltage Test Conditions Twater (in) = 25C Twater (in) = 40C Twater (in) = 25C Twa...
Description 1200V dual thyristor water cooled welding module
Dual Thyristor Water Cooled Welding Module Preliminary Information

File Size 120.52K  /  8 Page

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