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  micron technology inc Datasheet PDF File

For micron technology inc Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    Q67040S4726 IGW75N60T

INFINEON[Infineon Technologies AG]
Part No. Q67040S4726 IGW75N60T
Description 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-technology. ...
Low Loss IGBT in Trench and Fieldstop technology

File Size 365.66K  /  12 Page

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    Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
Part No. 256 600 120 ATL25_432 ATL25 ATL25_976 ATL25_100 ATL25_120 ATL25_132 ATL25_144 ATL25_160 ATL25_184 ATL25_208 ATL25_228 ATL25_256 ATL25_304 ATL25_388 ATL25_44 ATL25_484 ATL25_540 ATL25_600 ATL25_68 ATL25_700 ATL25_800 ATL25_84 ATL25_900 ATL25_352 ATL25/132 ATL25/208 ATL25/388 ATL25/432 ATL25/540 ATL25/976 ATL25/120 ATL25/800 ATL25/100 ATL25/184 ATL25/228 ATL25/352 ATL25/84 ATL25/256 ATL25/68 ATL25/700 ATL25/484 ATL25/304 ATL25/600 ATL25/900 ATL25/144 ATL25/160 ATL25/44
Description ASIC 专用集成电路
From old datasheet system
The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi

File Size 217.07K  /  14 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 SGB15N120 SGP15N120
Description Fast S-IGBT in NPT-technology
Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技
IGBTs & DuoPacks - 15A 1200V TO220AB IGBT

File Size 448.47K  /  12 Page

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    IRF3205LTRR IRF3205S IRF3205STRR

International Rectifier
Part No. IRF3205LTRR IRF3205S IRF3205STRR
Description 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process technology
   Advanced Process technology

File Size 612.72K  /  11 Page

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    IRF[International Rectifier]
Part No. IRF7101PBF IRF7101TRPBF IRF7101PBF-15
Description ADVANCED PROCESS technology
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Adavanced Process technology

File Size 273.34K  /  9 Page

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    N25Q064A13ESF40G N25Q064A13ESFA0F N25Q064A13E1240F N25Q064A13EF840E N25Q064A13ESE40G N25Q064A13EF640F

micron technology
Part No. N25Q064A13ESF40G N25Q064A13ESFA0F N25Q064A13E1240F N25Q064A13EF840E N25Q064A13ESE40G N25Q064A13EF640F
Description micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
64Mb, 3V, Multiple I/O Serial Flash Memory
   64Mb, 3V, Multiple I/O Serial Flash Memory
   micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase

File Size 1,025.16K  /  81 Page

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Part No. ATL60 ATLS60/225 ATL60/435 ATLS60/80 ATL60/550 ATL60/235 ATLS60/208 ATLS60/160 ATL60/85 ATL60/60 ATLS60/144
Description FPGA
ATL60 [Updated 11/99. 15 Pages] The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate. oxide isolated. triple level metal process. Extensive cell libraries are available and support the major CAD software tools.
From old datasheet system

File Size 103.35K  /  14 Page

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    Freescale (Motorola)
FREESCALE[Freescale Semiconductor, inc]
Part No. MRF9030MR1 MRF9030MBR1
Description 945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

File Size 617.23K  /  12 Page

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    MRF21120

Motorola, inc
Part No. MRF21120
Description MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETs
The RF Sub-micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 385.56K  /  8 Page

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    MOTOROLA[Motorola, inc]
Part No. MRF9060MR1 MRF9060MBR1 MRF9060M
Description MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs

File Size 414.13K  /  12 Page

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