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pre-terminated Datasheet PDF File

For pre-terminated Found Datasheets File :: 1780 Search Time::3.75ms
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				Freescale Semiconductor, Inc
Part No.	MCZ33937EK_R2
OCR Text	Pre-driver The 33937 is a Field Effect Transistor (FET) pre-driver designed for three phase motor control and similar applications. The int...terminated (floating) however, it is recommended that the Exposed Pad be terminated to pin 29 (VSS) ...
Description	Three Phase Field Effect Transistor Pre-driver
File Size	616.63K / 47 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ADATE209 ADATE209BBCZ
OCR Text	... mode. It also contains peaking/pre-emphasis circuitry. The ADATE209 is available in an 8 mm x 8 mm, 49-ball CSP_BGA. Rev. 0 Information...terminated, 20% to 80% VHx = 0.5 V, VLx = 0.0 V, terminated, 20% to 80% VHx = 1.0 V, VLx = 0.0 V, te...
Description	4.0 Gbps Dual Driver
File Size	814.39K / 16 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 5962D9960601TUA 5962D9960601TUC 5962D9960601TUX 5962D9960602QUA 5962D9960602QUC 5962D9960602QUX 5962D9960602TUA 5962D9960602TUX 5962D9960602TUC 5962-9960601TUA 5962-9960602TUX 5962-9960601TUC 5962P9960601TUA 5962P9960601TUC 5962P9960601TUX UT7Q512K-UPX UT7Q512K-UWC
OCR Text	...y array 1024 rows 512x8 columns pre-charge circuit clk. gen. r o w s e l e c t a0 a1 a2 a3 a4 a5 a6 a7 a8 a9 i/o circuit column select dat...terminated by w going high, with e s till active. the write pulse width is defined by t wlwh w...
Description	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option. 512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
File Size	106.53K / 16 Page	View it Online	Download Datasheet

				TI store
Part No.	SCAN90004-18
OCR Text	pre-emphasis check for samples: scan90004 1 features description the scan90004 is a four channel 1.5 gbps lvds 2 ? 1.5 gbps maximum data rat...terminated with a 100 ? resistor to improve performance and minimize board ? ieee 1149.1 jtag interf...
Description	<font color=red>[Old version datasheet]</font> 4-Channel LVDS Buffer/Repeater with Pre-Emphasis
File Size	284.50K / 14 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard)
Part No.	HMMC-3102 HMMC-3102-BLK HMMC-3102-TR1
OCR Text	...nput Power Sensitivity: On-chip pre- and post-amps t -20 to +10 dBm (1-10 GHz) len i Ag -15 to +10 dBm (10-12 GHz) -10 to +5 dBm (12-15 GHz)...terminated) Power level of in appearing at RFout or RFout (@ in = 12 GHz, Pin = 0 dBm, Referred to P...
Description	DC - 16 GHz Packaged Divide-by-2 Prescaler
File Size	376.37K / 6 Page	View it Online	Download Datasheet

				Vitesse Semiconductor Corporation
Part No.	VSC8163 VSC8163QR
OCR Text	...ation VCC 50 50 100 Pre-Driver Z0 = 50 VEE Page 4 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vit...
Description	OC-48 16:1 SONET/SDH MUX with Clock Generator
File Size	190.15K / 20 Page	View it Online	Download Datasheet

				Lowpower Semiconductor ...
Part No.	LP28007
OCR Text	... ax u nits precharge batt pre - charge rising threshold v prech 2.6 2.8 3 v batt pre - charge threshold hysteresis ? v prech 50 100 200 mv pre - charge current i pchg v batt =2v 8 10 12 % recharg...
Description	Internal Integrate P-MOSFETs
File Size	1,090.80K / 11 Page	View it Online	Download Datasheet

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