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  s21e2 Datasheet PDF File

For s21e2 Found Datasheets File :: 216    Search Time::1.547ms    
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    2SC5489

Sanyo Semicon Device
Part No. 2SC5489
OCR Text ...2dB typ (f=1GHz). * High gain : s21e2=13dB typ (f=1GHz). * High cutoff frequency : fT=9.0GHz typ. * Ultrasmall, slim flat-lead package. (1.4mm x 0.8mm x 0.6mm) Package Dimensions unit:mm 2159 [2SC5489] 1.4 0.3 0.25 3 0.1 0...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

File Size 30.04K  /  3 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SC5781
OCR Text ...rd Transfer Gain, S21e -- dB s21e2 -- IC f=1GHz 2 Forward Transfer Gain, S21e -- dB 12 s21e2 -- IC f=2GHz 14 3V V CE= 10 1V 12 V CE=3V 8 1V 6 10 8 4 6 4 2 1.0 2 2 3 5 7 10 ...
Description High-Frequency Low-Noise Amplifier and OSC Applications

File Size 36.30K  /  7 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SC5646
OCR Text ...w operating voltage. High gain :s21e2=9.5dB typ (f=2GHz). Ultraminiature and thin flat leadless package (1.4mm!0.8mm!0.6mm). 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta...
Description UHF to S Band Low-Noise Amplifier andOSC Applications

File Size 31.70K  /  6 Page

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    UPA826TC UPA826TC-T1

NEC Corp.
Part No. UPA826TC UPA826TC-T1
OCR Text ...6.00 12.00 Insertion Power Gain s21e2 (dB) Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 3 V f = 2 GHz 10.00 14.00 8.00 12.00 6.00 10.00 4.00 8.00 1 10 Collector Current IC (mA) ...
Description RAC15-TB(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Auxilary Voltage (Vdc): 15V; Features: Compact AC-DC Power
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD

File Size 64.71K  /  12 Page

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    2SC5503

Sanyo Semicon Device
Part No. 2SC5503
OCR Text ...2dB typ (f=1GHz). * High gain : s21e2=15dB typ (f=1GHz). * High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2161 [2SC5503] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 ...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

File Size 40.88K  /  6 Page

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    UPA814 UPA814TC UPA814TC-T1

NEC[NEC]
Part No. UPA814 UPA814TC UPA814TC-T1
OCR Text ...NT 15.000 Insertion Power Gain s21e2 (dB) Gain Bandwidth Product fT (GHz) Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT 9.000 f = 2 GHz 8.000 VCE = 3 V f = 2 GHz VCE = 1 V VCE = 3 V 13.000 6.000 11.000...
Description NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

File Size 81.46K  /  20 Page

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    FH203 1288

SANYO[Sanyo Semicon Device]
Part No. FH203 1288
OCR Text ...T00481 No.6179-2/9 FH203 s21e2 -- IC [Tr1] f=1.5GHz Forward Transfer Gain, S21e - dB 16 14 12 16 s21e2 -- IC =5V V CE [Tr1] f=1GHz Forward Transfer Gain, S21e - dB 14 12 2 2 2V V =5 E VC 1V 10 8 6 ...
Description From old datasheet system
VCO OSC Circuit Applications

File Size 65.16K  /  9 Page

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    2SC5504

Sanyo Semicon Device
Part No. 2SC5504
OCR Text ...B typ (f=1.5GHz). * High gain : s21e2=11dB typ (f=1GHz). * High cutoff frequency : fT=11GHz typ. * Low voltage, low current operation. (VCE=1V, IC=1mA) : fT=7GHz typ. : s21e2=6dB typ (f=1.5GHz). Package Dimensions unit:mm 2161 [2SC5504...
Description NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

File Size 43.83K  /  6 Page

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    55GN01M

Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
Part No. 55GN01M
OCR Text ...y : fT= 5.5GHz typ. High gain : s21e2=10dB typ (f=1GHz). 0.15 3 2.1 1.250 0 to 0.1 0.425 12 0.65 0.65 2.0 0.3 0.9 0.6 1 : Base 2 : Emitter 3 : Collector Specifications Absolute Maximum Ratings at Ta=25C Paramet...
Description UHF Wide-band Low-noise Amplifier Applications
Pico-GET Series

File Size 25.82K  /  5 Page

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    SANYO
Part No. 55GN01N
OCR Text ...y : fT= 5.5GHz typ. High gain : s21e2 =7dB typ (f=1GHz). =13dB typ (f=400MHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current...
Description Pico-GET Series

File Size 36.45K  /  6 Page

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For s21e2 Found Datasheets File :: 216    Search Time::1.547ms    
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