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SamHop Microelectronics...
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Part No. |
stt01L07
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OCR Text |
... product 1.2 1.9 t a =25 c g s stt sris sot - 223 thermal characteristics 42 c/w thermal resistance, junction-to-ambient r ja a e esd protected. s g d
symbol min typ max units bv dss 70 v 1 i gss 10 ua v gs(th) v 421 g fs s c is... |
Description |
Super high dense cell design for low RDS(ON). N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
131.92K /
8 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics...
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Part No. |
stt01L10
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OCR Text |
....2 1.9 g d s t a =25 c g s stt sris sot - 223 thermal characteristics 42 c/w thermal resistance, junction-to-ambient r ja a d
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 230 g fs s c iss 480 pf c oss 28 pf c ... |
Description |
Super high dense cell design for low RDS(ON). N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
124.49K /
8 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics
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Part No. |
stt02N10
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OCR Text |
... product 1.6 1.9 t a =25 c g s stt sris sot - 223 thermal characteristics 42 c/w thermal resistance, junction-to-ambient r ja a c s g d
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 400 g fs s c iss 169 pf c os... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
132.77K /
8 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics...
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Part No. |
stt02N20
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OCR Text |
... product 1.1 1.9 t a =25 c g s stt sris sot - 223 thermal characteristics 42 c/w thermal resistance, junction-to-ambient r ja a c s g d
symbol min typ max units bv dss 200 v 1 i gss 100 na v gs(th) v 1.22 g fs s c iss 245 pf c o... |
Description |
Super high dense cell design for low RDS(ON). N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
132.69K /
8 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics...
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Part No. |
stt03L03
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OCR Text |
... product 2.4 1.9 t a =25 c g s stt sris sot - 223 thermal characteristics 42 c/w thermal resistance, junction-to-ambient r ja a e esd protected. s g d
symbol min typ max units bv dss 30 v 1 i gss 10 ua v gs(th) v 83 g fs s c iss... |
Description |
Super high dense cell design for low RDS(ON). N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
132.70K /
8 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics...
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Part No. |
stt03L06
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OCR Text |
....4 1.9 g d s t a =25 c g s stt sris sot - 223 thermal characteristics 42 c/w thermal resistance, junction-to-ambient r ja a e
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) v 81 g fs s c iss 496 pf c oss 44 pf c rs... |
Description |
Super high dense cell design for low RDS(ON). N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
133.05K /
8 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics...
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Part No. |
stt03N10
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OCR Text |
...en product 2 1.9 t a =25 c g s stt sris sot - 223 thermal characteristics 42 c/w thermal resistance, junction-to-ambient r ja a c s g d
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 235 g fs s c iss 252 pf c os... |
Description |
Super high dense cell design for low RDS(ON). N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
132.72K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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