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				TOSHIBA
Part No.	TK14G65W5
OCR Text	...lity data (i.e. reliability test report and estimated failure rate, etc). d2pak 2014-02-25 rev.2.0 tk14g65w5 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal characteristics character...
Description	Power MOSFET (N-ch 500V<VDSS≤700V)
File Size	239.17K / 10 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	SSM6N35FU
OCR Text	...iability data (i.e. reliability test report and estimated failure rate, etc). note1: total rating marking equivalent circuit (top view) unit: mm jedec D jeita D toshiba 2-2j1c weight: 6.8 mg (typ.) 6 kz 4 1 2 3 5...
Description	Small-signal MOSFET 2 in 1
File Size	197.79K / 5 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	SSM6N35FE
OCR Text	...iability data (i.e. reliability test report and estimated failure rate, etc). note 1: to ta l r a t i n g mounted on an fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 6) marking equivalent circuit (to...
Description	High-Speed Switching Applications
File Size	183.97K / 2 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK6032DPH-E0 RJK6032DPH-E0T2
OCR Text	...item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 600 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 ? av ds = 600 v, v gs = 0 gate to source leak current i...
Description	600V - 3A - MOS FET High Speed Power Switching
File Size	95.62K / 7 Page	View it Online	Download Datasheet

				New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct... New Jersey Semiconductors
Part No.	RFP5P12 RFP5P15
OCR Text	...rs reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj sem...
Description	P-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
File Size	84.33K / 2 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ADG1212YRUZ ADG1212YCPZ-500RL7 ADG1212YCPZ-REEL7 ADG1212YRUZ-REEL ADG1212YRUZ-REEL7 ADG1211YRUZ ADG1211-12 ADG1211-15 ADG1211YCPZ-REEL7 ADG1211YRUZ-REEL ADG1212-15 ADG1213YCPZ-500RL7 ADG1213YRUZ ADG1211YCPZ-500RL7 ADG1211YRUZ-REEL7 ADG1213YCPZ-REEL7 ADG1213YRUZ-REEL
OCR Text	... w applications automatic test equip ment data acquisition s ystems battery- powered syst ems sample- and - hold sy stems audio signal rou ting video signal routing communication s ystems general description the a...
Description	Low Capacitance, Low Charge Injection, ±15 V/ 12 V iCMOS Quad SPST Switches Low Capacitance, Low Charge Injection, ±15 V/ 12 V iCMOS Quad SPST Switches
File Size	316.13K / 16 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ADG1212SRU-EP-RL7 ADG1212-EP
OCR Text	...acturing baseline one assembly/test site one fabrication site enhanced product change notification qualification data available on request applications automatic test equipment data acquisition systems battery-powered systems sam...
Description	Low Capacitance, Low Charge Injection Low Capacitance, Low Charge Injection
File Size	255.32K / 12 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPN2R503NC
OCR Text	...lity data (i.e. reliability test report and estimated failure rate, etc). tson advance 2014-01-07 rev.4.0 tpn2r503nc 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal characteristics c...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	243.24K / 9 Page	View it Online	Download Datasheet

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