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  to-262aa Datasheet PDF File

For to-262aa Found Datasheets File :: 255    Search Time::1.859ms    
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    VB40100C

Vishay Siliconix
Part No. VB40100C
OCR Text ...= 0.38 V at IF = 5 A TMBS (R) TO-220AB ITO-220AB FEATURES * Trench MOS Schottky technology * Low forward voltage drop, low power losses...262AA package) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS...
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 186.97K  /  5 Page

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    VB40100G

Vishay Siliconix
Part No. VB40100G
OCR Text ...= 0.42 V at IF = 5 A TMBS (R) TO-220AB ITO-220AB FEATURES * Trench MOS Schottky technology * Low forward voltage drop, low power losses...262AA package) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS...
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 186.78K  /  5 Page

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    VB30120SG-E3-8W V30120SG-E3-4W VB30120SG-E3-4W VF30120SG-E3-4W VI30120SG-E3-4W V30120SG10

Vishay Siliconix
Part No. VB30120SG-E3-8W V30120SG-E3-4W VB30120SG-E3-4W VF30120SG-E3-4W VI30120SG-E3-4W V30120SG10
OCR Text ..., lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab, and to-262aa package) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/e...
Description High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 150.88K  /  5 Page

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    V30120S-E3/45 VI30120S-E3/4W

Vishay Siliconix
Part No. V30120S-E3/45 VI30120S-E3/4W
OCR Text ...Trench MOS Schottky Technology TO-220AB K to-262aa * Low forward voltage drop, low power losses * High efficiency operation * Low thermal resistance * Solder Dip 260 C, 40 seconds 3 2 V30120S PIN 1 PIN 3 PIN 2 CASE 3 1 VI30120S ...
Description High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 133.65K  /  5 Page

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    VB30100S-E3-4W VF30100S VF30100S-E3-4W VB30100S-E3-8W VI30100S-E3-4W V30100S-E3-4W

Vishay Siliconix
Part No. VB30100S-E3-4W VF30100S VF30100S-E3-4W VB30100S-E3-8W VI30100S-E3-4W V30100S-E3-4W
OCR Text ..., lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab, and to-262aa package) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/e...
Description High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 146.02K  /  5 Page

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    VB20150SG-E3/4W VB20150SG-E3/8W V20150SG-E3/4W VI20150SG-E3/4W VF20150SG-E3/4W

Vishay Siliconix
Part No. VB20150SG-E3/4W VB20150SG-E3/8W V20150SG-E3/4W VI20150SG-E3/4W VF20150SG-E3/4W
OCR Text ..., lf maximum peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 s (for to-220ab, ito-220ab and to-262aa package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency inv...
Description High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

File Size 164.56K  /  5 Page

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    VB20120SG-E3-8W VB20120SG-E3-4W VF20120SG-E3-4W VI20120SG-E3-4W VF20120SG-E3/4W V20120SG09

Vishay Siliconix
VISHAY SEMICONDUCTORS
Part No. VB20120SG-E3-8W VB20120SG-E3-4W VF20120SG-E3-4W VI20120SG-E3-4W VF20120SG-E3/4W V20120SG09
OCR Text ..., lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab, and to-262aa package) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/e...
Description High-Voltage Trench MOS Barrier Schottky Rectifier
20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 156.83K  /  5 Page

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    MI3060C MI3060C-E3/4W MF3060C MF3060C-E3/4W M3060C M3060C-E3/4W

Vishay Siliconix
Part No. MI3060C MI3060C-E3/4W MF3060C MF3060C-E3/4W M3060C M3060C-E3/4W
OCR Text ... ? solder dip 260 c, 40 s (for to-220ab, ito-220ab and to-262aa package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage, high frequency rectifier of switching mode power suppli...
Description Dual Common-Cathode Schottky Rectifier

File Size 154.90K  /  5 Page

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    VB20100SG-E3-8W V20100SG-E3-4W VF20100SG VF20100SG-E3-4W V20100SG09 VB20100SG-E3-4W VI20100SG-E3-4W V20100SG-E3/4W

Vishay Siliconix
VISHAY SEMICONDUCTORS
Part No. VB20100SG-E3-8W V20100SG-E3-4W VF20100SG VF20100SG-E3-4W V20100SG09 VB20100SG-E3-4W VI20100SG-E3-4W V20100SG-E3/4W
OCR Text ..., lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab, and to-262aa package) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ...
Description High-Voltage Trench MOS Barrier Schottky Rectifier
20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 145.77K  /  5 Page

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    Vishay
Part No. VB20150SG
OCR Text ..., lf maximum peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 s (for to-220ab, ito-220ab and to-262aa package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency inv...
Description High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 222.59K  /  5 Page

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For to-262aa Found Datasheets File :: 255    Search Time::1.859ms    
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