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  v 200 Datasheet PDF File

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    GSI Technology, Inc.
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Part No. GS8320Zv36T-200 GS8320Zv36T-133 GS8320Zv36T-133I GS8320Zv36T-150 GS8320Zv36T-166 GS8320Zv36T-166T GS8320Zv18T-200I
OCR Text v v dd 1.8 v i/o 100-pin tqfp commercial temp industrial temp rev: 1.01 10/2004 1/23 ? 2001, gsi technology specifications cited are subje...200 -166 -150 -133 unit pipeline 3-1-1-1 t kq tcycle 2.5 4.0 2.7 4.4 3.0 5.0 3.5 6.0 3.8 6.6 4.0 7.5...
Description 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 6.5 ns, PQFP100
1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100

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Part No. GS864036T-200 GS864036T-300I
OCR Text v or 3.3 v v dd 2.5 v or 3.3 v i/o 100-pin tqfp commercial temp industrial temp rev: 1.00 9/2004 1/24 ? 2004, gsi technology specification...200 -167 unit pipeline 3-1-1-1 t kq tcycle 2.3 3.3 2.5 4.0 3.0 5.0 3.5 6.0 ns ns curr (x18) curr (...
Description 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs

File Size 600.54K  /  24 Page

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Part No. GS8640v36T-200 GS8640v36T-300 GS8640v36T-300I
OCR Text v v dd 1.8 v i/o 100-pin tqfp commercial temp industrial temp rev: 1.00 9/2004 1/23 ? 2004, gsi technology specifications cited are subjec...200 -167 unit pipeline 3-1-1-1 t kq tcycle 2.3 3.3 2.5 4.0 3.0 5.0 3.5 6.0 ns ns curr (x18) curr (...
Description 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs

File Size 444.61K  /  23 Page

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Part No. GS8640Z36T-200 GS8640Z36T-300I
OCR Text v or 3.3 v v dd 2.5 v or 3.3 v i/o 100-pin tqfp commercial temp industrial temp rev: 1.01 1/2006 1/25 ? 2004, gsi technology specification...200 -167 unit pipeline 3-1-1-1 t kq tcycle 2.3 3.3 2.5 4.0 3.0 5.0 3.5 6.0 ns ns curr (x18) curr (...
Description 72Mb Pipelined and Flow Through Synchronous NBT SRAM

File Size 610.03K  /  25 Page

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    GS8662D08GE-200 GS8662D08GE-333I GS8662D08GE-250I GS8662D08GE-167I GS8662D08GE-200I GS8662D08GE-300I GS8662D18E-300I

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GSI Technology
Part No. GS8662D08GE-200 GS8662D08GE-333I GS8662D08GE-250I GS8662D08GE-167I GS8662D08GE-200I GS8662D08GE-300I GS8662D18E-300I
OCR Text v v dd 1.8 v and 1.5 v i/o 165-bump bga commercial temp industrial temp rev: 1.01a 2/2006 1/29 ? 2005, gsi technology specifications cited...200 -167 tkhkh 3.0 ns 3.3 ns 4.0 ns 5.0 ns 6.0 ns tkhqv 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.50 ns 165-...
Description 72Mb SigmaQuad-II Burst of 4 SRAM

File Size 888.22K  /  29 Page

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    BY880-200 BY880-800 BY880-50 BY880-600 BY880-400 BY880-1000

DIOTEC SEMICONDUCTOR AG
Part No. BY880-200 BY880-800 BY880-50 BY880-600 BY880-400 BY880-1000
OCR Text ... spitzensperrspannung 50...1000 v plastic case kunststoffgeh?use ? 5.4 x 7.5 [mm] weight approx. gewicht ca. 1.0 g plastic material has ul c...200 200 200 by880-400 400 400 by880-600 600 600 by880-800 800 800 by880-1000 1000 1000 max. average ...
Description Silicon Rectifier Diodes ?Silizium-Gleichrichterdioden
8 A, 200 v, SILICON, RECTIFIER DIODE

File Size 99.61K  /  2 Page

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    BYW29FP-200 5011 BYW29G-200 BYW29-200 BYW29F-200 BYW29G-200-TR

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. BYW29FP-200 5011 BYW29G-200 BYW29-200 BYW29F-200 BYW29G-200-TR
OCR Text ... vRRM trr (max) vF (max) 8A 200 v 25 ns 0.85 v A A K K FEATURES AND BENEFITS very Low Forward Losses Negligible switching losses High surge current capability Insulated packages (ISOWATT220AC, TO-220FPAC): Insulation voltage: 200...
Description Low noise low drop voltage regulator with shutdown function
From old datasheet system
HIGH EFFICIENCY FAST RECOvERY DIODES
HIGH EFFICIENCY FAST RECOvERY DIODES

File Size 120.61K  /  7 Page

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    BYW51R-200 BYW51FP-200

ST Microelectronics
STMicroelectronics
Part No. BYW51R-200 BYW51FP-200
OCR Text ...fp) : insulation voltage = 2000 v dc capacitance = 12 pf features and benefits dual center tap rectifier suited for switched mode power supp...200 symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(rms) rms forward cur...
Description 10 A, 200 v, SILICON, RECTIFIER DIODE PLASTIC, I2PAK-3
   HIGH EFFICIENCY FAST RECOvERY RECTIFIER DIODES

File Size 154.39K  /  9 Page

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    ST Microelectronics
Part No. SMBYW02-200
OCR Text ...aa) symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(rms) rms forward current 10 a i f(av) average forward current tl=100 c d = 0.5 2a i fsm non repetitive surge peak forward current tp=10ms sinusoidal 50 a t...
Description 2 A, 200 v, SILICON, RECTIFIER DIODE, DO-214AA PLASTIC, SMB, 2 PIN

File Size 185.94K  /  5 Page

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    BLA1011S-200 BLA1011-200 BLA1011-200.112 LA1011-200

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BLA1011S-200 BLA1011-200 BLA1011-200.112 LA1011-200
OCR Text ...ng transport and handling. vDS (v) 36 36 36 PL (W) 200 250 250 Gp (dB) 15 14 14 D (%) 50 50 50 tr (ns) 35 35 35 tf (ns) 6 6 6 1.2 Features s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltag...
Description Avionics LDMOS transistor BLA1011S-200<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

File Size 65.85K  /  13 Page

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