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  vcbo-60v Datasheet PDF File

For vcbo-60v Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    TY Semiconductor Co., Ltd
Part No. 2SA1923
Description High Voltage:VCBO=-400V Low Saturation Voltage:VCE(sat)=-1V(Max.)

File Size 132.37K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SA1257
Description High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V

File Size 70.77K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC5211
Description High voltage VCEO=50V. Small package for mounting.Collector-base voltage VCBO 55 V

File Size 131.06K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC2946
Description High Votage VCEO=200V High speed tf us Collector to base voltage VCBO 330 V

File Size 72.33K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SB1219A
Description Large collector current IC. Collector-base voltage VCBO -60 V

File Size 67.83K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. 2SA1179
Description High breakdown voltage Collector-base voltage VCBO -55 V

File Size 57.99K  /  1 Page

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    IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF
Description Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 12mohm,身份证\u003d 57A条)
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 294.94K  /  12 Page

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    TY Semicondutor
TY Semiconductor Co., Ltd
Part No. BCW60A
Description NPN General Purpose Transistors
NPN epitaxial silicon transistor. Collector-base voltage VCBO 32 V

File Size 155.52K  /  2 Page

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    ASI10673 UHBS60-2

ASI[Advanced Semiconductor]
Advanced Semiconductor, Inc.
Part No. ASI10673 UHBS60-2
Description    NPN SILICON RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:9.0A,Vcbo: 50 V,Vceo: 26 V,Vces: 50V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0A,Vcbo: 50 V,Vceo: 26 V,Vces: 50V,Vebo: 4.0 V)) Si, NPN, RF POWER TRANSISTOR

File Size 17.70K  /  1 Page

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    FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. FDD5612
Description 2MM SOCKET STRIPS
60V N-Channel PowerTrench?/a> MOSFET
60V N-Channel PowerTrench⑩ MOSFET
60V N-Channel PowerTrench MOSFET

File Size 146.11K  /  5 Page

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