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IRF[International Rectifier]
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| Part No. |
IRHF7130 JANSH2N7261 IRHF8130 JANSR2N7261
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| OCR Text |
...D = 5.0A VGS = 12V, ID = 8.0A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 5.0A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 8.0A VDS = Max Rating x 0.5 VDD = 50V, ID = 8.0A, RG = ... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
287.32K /
12 Page |
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it Online |
Download Datasheet
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International Rectifier
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| Part No. |
IRHNJ67230 IRHNJ63230
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| OCR Text |
...D = 1.0mA VGS = 12V, ID = 10A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 10A A VDS = 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 16A VDS = 100V VDD = 100V, ID = 16A, VGS = 12V, RG = 7.5
IGSS IGSS Qg Q ... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
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| File Size |
140.98K /
8 Page |
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it Online |
Download Datasheet |
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Wuxi NCE Power Semicond...
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| Part No. |
NCE1216
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| OCR Text |
...1:switching test circuit vds drain-source voltage (v) figure 3 output characteristics vg s gate-source voltage (v) figure 5 rdson vs vgs v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t... |
| Description |
NCE P-Channel Enhancement Mode Power MOSFET
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| File Size |
222.64K /
6 Page |
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it Online |
Download Datasheet |
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Wuxi NCE Power Semicond...
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| Part No. |
NCE1205
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| OCR Text |
...1:switching test circuit vds drain-source voltage (v) figure 3 output characteristics i d - drain current (a) figure 5 drain-source on-resistance v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 1... |
| Description |
N and P-Channel Enhancement Mode Power MOSFET
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| File Size |
366.71K /
10 Page |
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it Online |
Download Datasheet |
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