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				International Rectifier
Part No.	IRL520NL IRL520NS
OCR Text	...)** CCC 40 thermal resistance c/w parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v ? 10 i d @ t c = 100c cont...single pulse avalanche energy ?? 85 mj i ar avalanche current ? 6.0 a e ar repetitive avalanche ener...
Description	Logic-Level Gate Drive
File Size	192.06K / 11 Page	View it Online	Download Datasheet

				TY Semicondutor
Part No.	AOTF12N30
OCR Text	w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot12n30l/aotf12n30l symbol parameter absolute max...single pulsed avalanche energy g 430 parameter maximum case-to-sink a maximum lead temperature for...
Description	single N -Channel MOSFET
File Size	774.95K / 6 Page	View it Online	Download Datasheet

				Goodwork Semiconductor Co.,... Goodwork Semiconductor ...
Part No.	SM2150B SM2200B
OCR Text	...0 170 0.92 c c c /w 410 2.0 amperes rating and characteristic curves (sm2150b thru sm2200b) 0.1 1.0 .01 10 50 fig.1-typi...single half sine wave jedec method p e a k f o r w a r d s u r g e c u r r e n t , ( a ) lead ...
Description	2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
File Size	58.11K / 2 Page	View it Online	Download Datasheet

				Goodwork Semiconductor Co.,... Goodwork Semiconductor ...
Part No.	SM2150A SM2200A
OCR Text	...0 170 0.92 c c c /w 406 rating and characteristic curves (sm2150a thru sm2200a) 0.1 1.0 .01 10 50 fig.1-typical forward ...single half sine wave jedec method p e a k f o r w a r d s u r g e c u r r e n t , ( a ) lead ...
Description	2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
File Size	58.16K / 2 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTB04N03Q8
OCR Text	...issipation t a =100 p d 1 w operating junction and storage temp erature range tj, tstg -55~+150 c thermal data parameter sy...single pulse maximum drain current vs case temperature 0 5 10 15 20 25 30 25 50 75 100 125 150 175 t...
Description	N-Channel Logic Level Enhancement Mode Power MOSFET
File Size	265.42K / 9 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc.
Part No.	IS31AP2005-DLS2-TR
OCR Text	...= 8 ? v cc = 5.0v 1.70 w v cc = 4.2v 1.20 v cc = 3.6v 0.83 thd+n = 10% f = 1khz, r l = 4 ? v cc = 5.0v 2.9...single-ended input; however, the is31ap2005 should be used with differential inputs when in a nois...
Description	Audio Amplifiers 2.7w Audio Pwr Amp
File Size	434.45K / 16 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTB050P10E3 MTB050P10E3-0-UB-S
OCR Text	...(note 1) p d 200 w t c =100 c (note 1) 100 power dissipation t a =25 c ...single pulse maximum drain current vs case temperature 0 10 20 30 40 50 0 25 50 75 100 125 150 175 2...
Description	P-Channel Enhancement Mode Power MOSFET
File Size	274.18K / 8 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTB04N03H8
OCR Text	...ssipation t c =100 p d 20 w operating junction and storage temp erature range tj, tstg -55~+150 c 100% uis testing in conditio...single pulse maximum drain current vs case temperature 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125...
Description	N-Channel Logic Level Enhancement Mode Power MOSFET
File Size	271.02K / 11 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTB04N03E3
OCR Text	...ation t c =100 c p d 53 w operating junction and storage temperature tj, tstg -55~+175 c note : *1 . pulse width limited ...single pulse maximum drain current vs case temperature 0 20 40 60 80 100 120 140 25 50 75 100 125 15...
Description	N-Channel Enhancement Mode Power MOSFET
File Size	260.30K / 7 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTB04N03AQ8
OCR Text	... p dsm 1.6 *3 w operating junction and storage temp erature range tj, tstg -55~+150 c thermal data parameter sy...single pulse maximum drain current vs case temperature 0 5 10 15 20 25 25 50 75 100 125 150 175 t c ...
Description	N-Channel Logic Level Enhancement Mode Power MOSFET
File Size	271.77K / 9 Page	View it Online	Download Datasheet

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