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				美国讯泰微波有限公司上海代表 Hittite Microwave Corporation
Part No.	HMC336MS8G
OCR Text	...itch 104122 Evaluation PCB 1.05"x1.30" The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads an...
Description	GaAs MMIC SPDT NON-REFLECTIVE POSITIVE CONTROL SWITCH/ DC - 6.0 GHz GaAs MMIC SPDT NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 6.0 GHz
File Size	168.49K / 6 Page	View it Online	Download Datasheet

				Kingbright, Corp.
Part No.	KP-1608P1BT
OCR Text	x1.1mm (0603) parameter max. ratings collector-to-emitter breakdown voltage 30v emitter-to-collector breakdown voltage 5v power dissipation ...25mm(0.01") unless otherwise noted. electrical and radiant characteristics t a =25 c km2520f3c0...
Description	PHOTO TRANSISTOR DETECTOR
File Size	102.39K / 1 Page	View it Online	Download Datasheet

				Hittite Microwave Corpo... HITTITE[Hittite Microwave Corporation]
Part No.	HMC393MS8G
OCR Text	...witch 103037 Evaluation PCB 1.5"x1.5" The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connecte...
Description	GaAs MMIC DPDT DIVERSITY SWITCH, 5.0 - 6.0 GHz
File Size	251.73K / 6 Page	View it Online	Download Datasheet

				Qualtek Electronics Corporation
Part No.	QPDS15-48S
OCR Text	...,000hrs 41.9x37.1x10.16mm (1.65?x1.46?x0.4?) single outputs: 3.3vdc, 5vdc, 12vdc, 15vdc remote control control voltage (positive logic) con...25mm qpds15-48s15 15v 1a 0~1a 85% ...
Description	Approved to IEC/EN60950, UL60950 Safety Standards Remote Control
File Size	6,700.13K / 1 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D26323RA-GC36 K4D26323RA-GC
OCR Text	...rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.8GB/s/chip. I/O transactions are possibl...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
File Size	300.83K / 18 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D263238A-GC40 K4D263238A-GC45 K4D263238A-GC50
OCR Text	...rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.4GB/s/chip. I/O transactions are possibl...
Description	DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL
File Size	295.84K / 17 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	ST24C04
OCR Text	..., r w = 1 random address read 0 x1 start, device select, r w = 0, address, 1 restart, device select, r w = 1 sequential read 1 x 1 to 512 si...25mm frame m so8 150mil width temperature range 1 0 to 70 c 5 C20 to 85 c 6 C40 to 85 c 3 * C4...
Description	NOT FOR NEW DESIGN - 4 KBIT SERIAL I²C BUS EEPROM WITH USER-DEFINED BLOCK WRITE PROTECTION
File Size	124.45K / 16 Page	View it Online	Download Datasheet

For x1.25mm Found Datasheets File :: 107 Search Time::1.781ms
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