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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO6702
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| OCR Text |
... voltage 20 gate-source voltage 8 continuous drain current a i d 3.8 a 3 pulsed drain current b 10 schottky reverse voltage 20 continuous ...8a (v gs = 4.5v) r ds(on) < 50m ? (v gs = 4.5v) r ds(on) < 65m ? (v gs = 2.5v) r ds(on) < 9... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor with Schcttky Diode
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| File Size |
235.36K /
5 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN858
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| OCR Text |
...v) i t(rms) (a) 4 jct-04 jctw04 8 jctw08 12 jctw12 16 jctw16 20 jctw20 technology : topglass technology : mesaglass v drm =v rrm (v) i t(ms)...8a i drm /i rrm =10 m a max t j =25 c jcm-08-020 jcm-08-040 jcm-08-060 jcm-08-080 200 400 600 800 8... |
| Description |
SCRS AND TRIACS DICE
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| File Size |
153.65K /
22 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOT11S60
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| OCR Text |
... 178 mj mj avalanche current c 8* 8 junction and storage temperature range t c =25c dv/dt 1.4 20 power dissipation b 120 gate-source volta...8a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c m a v ds =0v, v gs =30v... |
| Description |
600V 11A a MOS TM Power Transistor
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| File Size |
615.79K /
6 Page |
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it Online |
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Alpha
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| Part No. |
AO4411L
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| OCR Text |
... 3 2.1 -55 to 150 t a =70c i d -8 -6.6 -40 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units ...8a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v ... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor 的P -沟道增强型场效应晶体
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| File Size |
106.95K /
4 Page |
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it Online |
Download Datasheet |
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