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NEC[NEC]
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| Part No. |
2SK2367 2SK2368
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| OCR Text |
...E DIMENSIONS (in millimeter)
1.0
15.7 MAX. 4 3.20.2 4.7 MAX. 1.5
FEATURES
2SK2368: RDS (on) = 0.6 (VGS = 10 V, ID = 8.0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Dr... |
| Description |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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| File Size |
96.76K /
8 Page |
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it Online |
Download Datasheet
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Renesas
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| Part No. |
2SK2373
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| OCR Text |
... Tch Tstg
2 1
Ratings 30 20 0.2 0.4 0.2 150 150 -55 to +150
Unit V V A A A mW C C
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
59.27K /
10 Page |
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it Online |
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hitachi
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| Part No. |
2SK2373
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| OCR Text |
...DR Pch** Tch Tstg Ratings 30 20 0.2 0.4 0.2 150 150 -55 to +150 Unit V V A A A mW C C
-------------------------------------------------------------------------------------- ----------------------------------------------------------------... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
38.44K /
5 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2393
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| OCR Text |
...V(BR)DSS I GSS Min 1500 -- -- 2.0 -- 1.8 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.9 3.0 4370 560 200 75 180 260 125 0.9 6.5 Max -- 1 500 4.0 2.8 -- -- -- -- -- -- -- -- -- -- Unit V A A V S pF pF pF ns ns ns ns V s I F = 8 A, VGS = 0 I... |
| Description |
Silicon N-Channel MOS FET
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| File Size |
42.97K /
8 Page |
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it Online |
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Renesas
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| Part No. |
2SK2393
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| OCR Text |
...V(BR)DSS I GSS Min 1500 -- -- 2.0 -- 1.8 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.9 3.0 4370 560 200 75 180 260 125 0.9 6.5 Max -- 1 500 4.0 2.8 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V s I F = 8 A, VGS = 0 I F = 8 A, VGS ... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
69.91K /
11 Page |
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it Online |
Download Datasheet |
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hitachi
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| Part No. |
2SK2393
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| OCR Text |
...st conditions ID = 10 mA, VGS = 0* VGS = 20 V, VDS = 0 VDS = 1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 15 V * ID = 4 A VDS = 20 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5
-----------------------------------... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
49.95K /
6 Page |
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it Online |
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Fuji Electric
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| Part No. |
2SK2525-01
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| OCR Text |
...h=25C
Min. 450 2,5
Typ. 3,0
Max. 3,5 500 1,0 100 1,0 1700 200 75 30 75 90 55 1,65
3,0
10 0,87 6,6 1150 130 50 20 50 60 35 1,1 550 3,9
9,0
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics It... |
| Description |
N-CHANNEL MOS-FET
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| File Size |
169.41K /
2 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
2SK2528-01
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| OCR Text |
...h=25C
Min. 900 2,5
Typ. 3,0 10 0,2 10 2,7 4,0 750 95 40 20 35 70 35 0,95 1100 5,5
Max. 3,5 500 1,0 100 3,6 1150 145 60 30 55 110 55 1,45
2,0
5
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics ... |
| Description |
N-channel MOS-FET
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| File Size |
154.70K /
2 Page |
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it Online |
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Price and Availability
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