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0.071 Datasheet PDF File

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				ADPOW[Advanced Power Technology]
Part No.	APT8024B2LL APT8024LLL
OCR Text	0.240W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	57.21K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text	0.240W POWER MOS V (R) FREDFET B2VFR Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs...071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Col...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 33A 0.240 Ohm
File Size	39.43K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2VR APT8024LVR
OCR Text	0.240W POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology ...071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Col...
Description	POWER MOS V 800V 33A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	38.06K / 2 Page	View it Online	Download Datasheet

				Microsemi Corporation ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8030LVFR APT8030LVFRG
OCR Text	0.300 POWER MOS V (R) FREDFET TO-264 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ...071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Dra...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	62.47K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030LVR
OCR Text	0.300 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Dra...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.26K / 4 Page	View it Online	Download Datasheet

				GE[General Semiconductor]
Part No.	AS3024 AS3028
OCR Text	... volts D TE * CASE STYLE ASC 0.953(24.2) 0.937(23.8) 0.539(13.7) 0.524(13.3) Peak Pulse Current - 60 Amperes FEATURES E AT P N ...071(1.8) 0.024(5.2) 0.023(.59) Plastic package has Underwriters Laboratory Flammability Class...
Description	AVALANCHE ALTERNATOR RECTIFIER PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY
File Size	92.11K / 1 Page	View it Online	Download Datasheet

				GE Security, Inc. GE[General Semiconductor]
Part No.	AS3524 AS3528 AS3524ANDAS3528
OCR Text	... Volts D TE * CASE STYLE ASC 0.953(24.2) 0.937(23.8) 0.539(13.7) 0.524(13.3) Peak Pulse Current - 65 Amperes FEATURES E AT P N ...071(1.8) 0.024(5.2) 0.023(.59) Plastic package has Underwriters Laboratory Flammability Class...
Description	AVALANCHE ALTERNATOR RECTIFIER PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY
File Size	114.36K / 2 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884
OCR Text	0 dBm Typical P 1 dB at 12 GHz * High Gain: 9.0 dB Typical GSS at 12 GHz * Low Cost Plastic Package * Tape-and-Reel Packaging Option Availab...071 .093 .106 .114 .120 .128 .134 .136 .138 .140 .146 .153 .153 .153 .158 .159 S22 Ang. 64 50 36 25 ...
Description	2-16 GHz General Purpose Gallium Arsenide FET
File Size	39.76K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-46171
OCR Text	0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 11.0 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz...071 .075 .079 .083 .093 .106 .112 .118 .121 S22 Ang. 63 30 13 2 -3 -6 -10 -14 -17 -21 -24 -32 -49 -6...
Description	2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
File Size	39.26K / 3 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
Part No.	BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 BC848CWT1 BC848AWT1 BC846AWT1
OCR Text	...VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc COLLECTOR 3 BC846AWT1,BWT1 BC847AWT1,BWT1, ...071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BS...
Description	CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR CASE 419-02/ STYLE 3 SOT-323/SC-70
File Size	206.89K / 6 Page	View it Online	Download Datasheet

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