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1N4002 SH7729R AD7506JQ BPV23NFL AAMUA 7720T TA8750AN MAX6608
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  0.6mh Datasheet PDF File

For 0.6mh Found Datasheets File :: 470    Search Time::1.485ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQP13N50CF FQPF13N50CF
OCR Text ...eatures * 13A, 500V, RDS(on) = 0.54 @VGS = 10 V * Low gate charge (typical 43 nC) * Low Crss (typical 20pF) * Fast switching * 100% avalanc...6mH, IAS = 13A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 13A, di/dt 200A/s, VDD BVDSS, Start...
Description 500V N-Channel MOSFET

File Size 1,139.54K  /  10 Page

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    IRF3703PBF

International Rectifier
Part No. IRF3703PBF
OCR Text ...0 100 1000 230 3.8 1.5 20 5.0 -55 to + 175 Units A W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Cas...6mH RG = 25, IAS = 76A. TJ 175C ISD 76A, di/dt 100A/s, VDD V(BR)DSS, Calculated continu...
Description SMPS MOSFET

File Size 173.03K  /  8 Page

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    VN82004 VN820_04 VN820 VN820-B5 VN820-B513TR VN820PT VN820PT13TR VN820SO VN820SO13TR VN820SP VN820SP13TR

STMICROELECTRONICS[STMicroelectronics]
Part No. VN82004 VN820_04 VN820 VN820-B5 VN820-B513TR VN820PT VN820PT13TR VN820SO VN820SO13TR VN820SP VN820SP13TR
OCR Text ...mum Switching Energy (L=4mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=13A) Maximum Switching Energy (L=3.7mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=1...6mH 13 20 20 VCC-41 VCC-48 VCC-55 Max 200 Unit C C C s A A V Tj>TTSD Note 1: To ensure long te...
Description HIGH SIDE DRIVER

File Size 542.02K  /  35 Page

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    VND60013TR VND600

STMICROELECTRONICS[STMicroelectronics]
Part No. VND60013TR VND600
OCR Text ...VCC Maximum Switching Energy (L=0.12mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=40A) Power dissipation at Tc=25C Junction operating temperature C...6mH IOUT=0.5A Tj= -40C...+150C VCC=13V 5.5V<VCC<36V 150 135 7 15 175 Test Conditions Min 25 Typ 40 M...
Description DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

File Size 234.08K  /  18 Page

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    ??『绉???′唤??????
友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 50N06-TF3-T 50N06L-X-TA3-T 50N06L-X-TF3-T 50N06-TA3-T 50N06
OCR Text ...Dissipation (TC = 25 ) 130 W PD 0.9 W/ Derating Factor above 25 Operation Junction Temperature TJ -55 ~ +150 Storage Temperature TSTG -55 ~ ...6mH, IAS=50A, VDD=25V, RG=0, Starting TJ=25 3. ISD50A, di/dt300A/s, VDDBVDSS, Starting TJ=25 4. Puls...
Description 50 Amps, 60 Volts N-CHANNEL POWER MOSFET

File Size 142.53K  /  8 Page

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    CMT14N50 CMT14N50N3P

Champion Microelectronic Corp.
Part No. CMT14N50 CMT14N50N3P
OCR Text ...om case for 10 seconds JC JA TL 0.65 40 260 /W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD Value 14 56 20 40 190 1.5 -55 to 150 588 V V W W/ mJ Unit A 2002/12/18 Preliminary Champion Microelectronic Corporation Page 1 CMT14N50 POW...
Description POWER FIELD EFFECT TRANSISTOR

File Size 249.87K  /  8 Page

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    MITSUMI[Mitsumi Electronics, Corp.]
Part No. K5-S K5-N K7-T3 K5-C K5-N1 K5-R2 K5-S2 K7-D K7-H5 K7-J K7-J5 K7-P K7-T K7-T1
OCR Text 0.1~20MHz (5) 40~70 (3) F:2% L:4% Features SMD 1000pcs./Reel K5-S2 Specifications (1) 1~300H (2) 0.1~20MHz (3) F:2% L:4% (4) (5) 40...6mH (2) 10~300kHz (3) F:2% L:5% (4) (5) 40~70 (1) Inductance (2) Operational frequency (3) Variable...
Description Adjustable Type Coils

File Size 178.77K  /  4 Page

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    Panasonic
Part No. 2SK2340
OCR Text ... 150 -55 to +150 Unit V 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 V A A mJ W C C 1: Ga...6mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off ...
Description Silicon N-Channel Power F-MOS FET

File Size 48.13K  /  4 Page

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    2SK2340

Panasonic Corporation
Panasonic Semiconductor
Part No. 2SK2340
OCR Text ... 150 -55 to +150 Unit V 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 V A A mJ W C C 1: Ga...6mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off ...
Description Silicon N-Channel Power F-MOS FET

File Size 42.12K  /  3 Page

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    2SK2374

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SK2374
OCR Text ...m 15.50.5 4.5 3.20.1 10.0 3.00.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a m...6mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off ...
Description Silicon N-Channel Power F-MOS FET 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 43.38K  /  3 Page

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For 0.6mh Found Datasheets File :: 470    Search Time::1.485ms    
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