0.75-5.0v 16a pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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0.75-5.0v 16a Datasheet PDF File

For 0.75-5.0v 16a Found Datasheets File :: 1514 Search Time::1.735ms
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				IRF[International Rectifier]
Part No.	IRG4PH50UD IRG4PH50
OCR Text	...80 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Units V A V W C Thermal Resistance Parameter ...75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , Case Tempera...
Description	1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
File Size	226.41K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPH40FD2
OCR Text	...ew. Max. 1200 29 17 58 58 8.0 130 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A V W ...75 15 63 106 4.5 6.2 140 335 133 85 Max. Units Conditions 67 IC = 17A 16 nC VCC = 400V 26 See Fig. 8...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=17A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)
File Size	380.38K / 8 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Maxim Integrated Products Inc MAXIM[Maxim Integrated Products]
Part No.	MAX1674EUA MAX1674 MAX1676EUB MAX1675EUA MAX1676 MAX1675
OCR Text	...Rectifier (no external diode) o 0.1A Logic-Controlled Shutdown o LBI/LBO Low-Battery Detector o Selectable Current Limit for Reduced Ripple ...75 0.75 0.36 VREF IREF = 0 SYMBOL VOUT FB = OUT FB = GND CONDITIONS MIN 3.13 4.75 2.20 1.2675 1.2675...
Description	SMPS CONTROLLER,VOLTAGE-MODE,CMOS,TSSOP,8PIN,PLASTIC From old datasheet system High-Efficiency, Low-Supply-Current, Compact, Step-Up DC-DC Converters
File Size	518.07K / 12 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... Mitsubishi Electric Semiconductor
Part No.	FS5KM-16 FS5KM-16a
OCR Text	0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS ..........
Description	HIGH-SPEED SWITCHING USE
File Size	43.55K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7831
OCR Text	... Max. 30 12 21 17 170 2.5 1.6 0.02 -55 to + 150 Units V f Power Dissipation f Power Dissipation c A W Linear Derating Fac...75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T J , Junction Te...
Description	HEXFETPower MOSFET HEXFETPower MOSFET HEXFET Power MOSFET
File Size	168.41K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR5305 IRFU5305 IRFRU5305 IRFR5305TR IRFR5305TRL IRFR5305TRR IRFR5305PBF IRFU5305PBF
OCR Text	...d D VDSS = -55V RDS(on) = 0.065 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize adv...75 100 125 150 175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case ...
Description	-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-55V Rds(on)=0.065ohm Id=-31A) HEXFET? Power MOSFET Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
File Size	155.18K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHM57160
OCR Text	...ds (Si) 1000K Rads (Si) RDS(on) 0.018 0.018 0.018 0.019 ID 35A* 35A* 35A* 35A* IRHM57160 100V, N-CHANNEL 4# TECHNOLOGY c TO-...75 75 35 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA ...
Description	RADIATION HARDENED POWER MOSFET
File Size	122.26K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. http://
Part No.	IRF034
OCR Text	... N-CHANNEL BVDSS RDS(on) 60V 0.050 ID 25 The HEXFET technology is the key to International Rectifier's advanced line of power MOSFE...75 0.60 20 19 4.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5(typical) Units A W ...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 重复性雪崩和DV /受好评的HEXFET三极管通孔（TO-204AA/AE DT）的 60V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	142.90K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF6607 IRF6607TR1
OCR Text	...Cdv/dt Immunity l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques VDSS 30V ...75 --- --- --- --- --- --- 1.9 --- --- --- --- --- --- --- pF VGS = 0V VDS = 15V ns nC nC VDS = 15V...
Description	30V Single N-Channel HEXFET Power MOSFET in a DirectFET package
File Size	197.87K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PF50WD
OCR Text	...04 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Units V A V W C Thermal Resistance Parameter ...75 100 125 150 1.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperat...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	246.57K / 10 Page	View it Online	Download Datasheet

For 0.75-5.0v 16a Found Datasheets File :: 1514 Search Time::1.735ms
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