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    AD8552 AD8552AR AD8552ARU AD8554 AD8551 AD8551AR AD8551ARM AD8554AR AD8554ARU

AD[Analog Devices]
Part No. AD8552 AD8552AR AD8552Aru AD8554 AD8551 AD8551AR AD8551ARM AD8554AR AD8554Aru
OCR Text 1 V Input Offset Drift: 0.005 V/ C Rail-to-Rail Input and Output Swing +5 V/+2.7 V Single-Supply Operation High Gain, CMRR, PSRR: 130 dB Ult...ru Suffix) OUT A IN A +IN A V 1 8 V+ OUT B IN B +IN B 8-Lead SOIC (R Suffix) AD8552 4 5 O...
Description Zero-Drift, Single-Supply, Rail-to-Rail Inpot/Output Operational Amplifier
Zero-Drift, Single-Supply, Rail-to-Rail Input/Output Operational Amplifiers

File Size 262.73K  /  20 Page

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    1MD02020

RMT Ltd.
Part No. 1MD02020
OCR Text ...y rmt ltd without notice. page 1 of 7 manufacturing options performance parameters dimensions 1md02-020-xx performance data are given for...ru copyright 2012. rmt ltd. the design and speci?ations of products can be changed by rmt ltd with...
Description Blank ceramics (not metallized)

File Size 1,778.68K  /  6 Page

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    ADG711 ADG711BR ADG711BRU ADG713 ADG713BR ADG713BRU ADG712 ADG712BR ADG712BRU ADG712BRU-REEL7

Analog Devices, Inc.
AD[Analog Devices]
Part No. ADG711 ADG711BR ADG711Bru ADG713 ADG713BR ADG713Bru ADG712 ADG712BR ADG712Bru ADG712Bru-REEL7
OCR Text 1.8 V to +5.5 V Single Supply Low On Resistance (2.5 Typ) Low On-Resistance Flatness -3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 16-Lea...ru-16 ru-16 ru-16 Table I. Truth Table (ADG711/ADG712) ADG711 In 0 1 ADG712 In 1 0 Switc...
Description    CMOS Low Voltage 4 ohm Quad SPST Switches
ECONOLINE: REC3-S_DRW(Z)/H4,H6 - Safety standards and approval: EN 60950 certified, rated for 250VAV (LVD test report)- Applied for Ul 1950 Component
CMOS Low Voltage 2.5 ohms Quad SPST Switch

File Size 118.99K  /  8 Page

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    Ruichips Semiconductor ...
Part No. ru7580R
OCR Text ...l resistance - junction to case 1.2 c /w drain - source avalanche ratin gs e as avalanche energy, single pulsed 169 m j ? 7 5 v/ 80 a, r ds...ru 7 580 r electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test co...
Description N-Channel Advanced Power MOSFET

File Size 296.37K  /  9 Page

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    Ruichips Semiconductor ...
Part No. ru75260Q
OCR Text ...n current v ds = 75 v, v gs =0v 1 m a t j =85 c 30 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage c...ru 7526 0q typical characteristics power dissipation drain current p tot - power ( w) i d - drain c...
Description N-Channel Advanced Power MOSFET

File Size 307.63K  /  9 Page

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    Ruichips Semiconductor ...
Part No. ru7085R
OCR Text ... resistance - junction to ca se 1.2 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 256 m j ? 7 0 v/ 85 a, r ds ...ru 7085 r electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test con...
Description N-Channel Advanced Power MOSFET

File Size 302.50K  /  9 Page

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    1MC04011

RMT Ltd.
Part No. 1MC04011
OCR Text ...y rmt ltd without notice. page 1 of 8 manufacturing options performance parameters dimensions 1mc04-011-xx performance data are given for...ru copyright 2012. rmt ltd. the design and speci?ations of products can be changed by rmt ltd with...
Description Blank ceramics (not metallized)

File Size 2,702.87K  /  7 Page

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    Ruichips Semiconductor ...
Part No. ru75170S
OCR Text ... forward current t c =25 c 1 5 0 a mounted on large heat sink i dp 300 s pulse drain current tested t c =25 c 60 0 ...ru 7 51 7 0 s electrical characteristics (t c =25 c unless otherwise noted) symbol par...
Description N-Channel Advanced Power MOSFET

File Size 327.42K  /  9 Page

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    Ruichips Semiconductor ...
Part No. ru75150R
OCR Text ... current v ds = 7 5 v, v gs =0v 1 m a t j =85 c 3 0 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage ...ru 75150 r typical characteristics power dissipation drain current p tot - power ( w) i d - drain c...
Description N-Channel Advanced Power MOSFET

File Size 305.00K  /  9 Page

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